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dc.contributor.authorKarmakar, Arka
dc.contributor.authorAl-Mahboob, Abdullah
dc.contributor.authorPetoukhoff, Christopher E.
dc.contributor.authorKravchyna, Oksana
dc.contributor.authorChan, Nicholas S.
dc.contributor.authorTaniguchi, Takashi
dc.contributor.authorWatanabe, Kenji
dc.contributor.authorDani, Keshav M.
dc.date.accessioned2022-05-09T12:22:44Z
dc.date.available2022-05-09T12:22:44Z
dc.date.issued2022-03-09
dc.identifier.citationKarmakar, A., Al-Mahboob, A., Petoukhoff, C. E., Kravchyna, O., Chan, N. S., Taniguchi, T., Watanabe, K., & Dani, K. M. (2022). Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure. ACS Nano, 16(3), 3861–3869. https://doi.org/10.1021/acsnano.1c08798
dc.identifier.issn1936-086X
dc.identifier.issn1936-0851
dc.identifier.doi10.1021/acsnano.1c08798
dc.identifier.urihttp://hdl.handle.net/10754/676704
dc.description.abstractType-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe2 and ReS2, nonradiative energy transfer (ET) from higher to lower work function material (ReS2 to MoSe2) dominates over the traditional CT process with and without a charge-blocking interlayer. Without a charge-blocking interlayer, the HS area shows 3.6 times MoSe2 photoluminescence (PL) enhancement as compared to the MoSe2 area alone. In a completely encapsulated sample, the HS PL emission further increases by a factor of 6.4. After completely blocking the CT process, more than 1 order of magnitude higher MoSe2 PL emission was achieved from the HS area. This work reveals that the nature of this ET is truly a resonant effect by showing that in a similar type-II HS formed by ReS2 and WSe2, CT dominates over ET, resulting in a severely quenched WSe2 PL. This study not only provides significant insight into the competing interlayer processes but also shows an innovative way to increase the PL emission intensity of the desired TMD material using the ET process by carefully choosing the right material combination for HS.
dc.description.sponsorshipA.K. acknowledges the useful discussion with Chakradhar Sahoo and the help received from Joel Pérez Urquizo in setting up the cryo-PL measurements. This work was supported by the funding from the Femtosecond Spectroscopy Unit at the Okinawa Institute of Science and Technology Graduate University. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant Number JPMXP0112101001) and JSPS KAKENHI (Grant Numbers 19H05790 and JP20H00354).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsnano.1c08798
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS NANO, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsnano.1c08798.
dc.subjectenergy transfer
dc.subjectcharge transfer
dc.subjectphotoluminescence
dc.subjecttransition metal dichalcogenide
dc.subjectheterostructure
dc.titleDominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalACS NANO
dc.rights.embargodate2023-03-09
dc.identifier.wosutWOS:000780214300038
dc.eprint.versionPost-print
dc.contributor.institutionFemtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna, Kunigami District, Okinawa 904-0495, Japan
dc.contributor.institutionInternational Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
dc.contributor.institutionResearch Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
dc.identifier.volume16
dc.identifier.issue3
dc.identifier.pages3861-3869
dc.identifier.arxivid2110.03492
kaust.personPetoukhoff, Christopher E.
dc.identifier.eid2-s2.0-85126632658


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