Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer
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Wang+et+al_2022_Jpn._J._Appl._Phys._10.35848_1347-4065_ac6a32.pdf
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Article
KAUST Department
Electrical and Computer EngineeringComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
KAUST Grant Number
BAS/1/1664-01-01URF/1/3437-01-01
URF/1/3771-01-01
URF/1/4374-01-01
Date
2022-04-25Permanent link to this record
http://hdl.handle.net/10754/676700Metadata
Show full item recordAbstract
Al2O3 is a broadly employed dielectric material in GaN high electron mobility transistors (HEMTs). Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaOx layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaOx layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4*1010 eV-1cm-2 at the energy level of 0.36 eV.Citation
Wang, C., lu, yi, Liao, C., chandroth, shibin, yuvaraja, saravanan, & Li, X. (2022). Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer. Japanese Journal of Applied Physics. https://doi.org/10.35848/1347-4065/ac6a32Sponsors
Support by KAUST Baseline BAS/1/1664-01-01, URF/1/3437-01-01, URF/1/3771-01-01, and URF/1/4374-01-01.Publisher
IOP PublishingAdditional Links
https://iopscience.iop.org/article/10.35848/1347-4065/ac6a32Scopus Count
Except where otherwise noted, this item's license is described as Archived with thanks to Japanese Journal of Applied Physics under a Creative Commons license, details at: https://creativecommons.org/licenses/by/4.0/