Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer
KAUST DepartmentElectrical and Computer Engineering
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/676700
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AbstractAl2O3 is a broadly employed dielectric material in GaN high electron mobility transistors (HEMTs). Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaOx layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaOx layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4*1010 eV-1cm-2 at the energy level of 0.36 eV.
CitationWang, C., lu, yi, Liao, C., chandroth, shibin, yuvaraja, saravanan, & Li, X. (2022). Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer. Japanese Journal of Applied Physics. https://doi.org/10.35848/1347-4065/ac6a32
SponsorsSupport by KAUST Baseline BAS/1/1664-01-01, URF/1/3437-01-01, URF/1/3771-01-01, and URF/1/4374-01-01.
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