Growth of Mono-Oriented Superconducting Hexagonal MoN on Amorphous Substrates
AuthorsAlsaadi, Rajeh S.
AdvisorsAlshareef, Husam N.
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Embargo End Date2023-04-27
Permanent link to this recordhttp://hdl.handle.net/10754/676650
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Access RestrictionsAt the time of archiving, the student author of this thesis opted to temporarily restrict access to it. The full text of this thesis will become available to the public after the expiration of the embargo on 2023-04-27.
AbstractHexagonal molybdenum nitride (δ-MoN) is one of the hardest superconductors, and its superconducting properties depend on the crystalline structure and the substrate of use. Herein, a versatile growth method has been utilized to grow single-crystalline (SC) δ-MoN thin films on any arbitrary substrate of interest. SC δ-MoN films have been achieved on amorphous substrates via the transfer of MoS2 precursors followed by chemical phase conversion. The transferred SC δ-MoN film on an amorphous SiO2/Si substrate exhibits superconductivity at Tc = 4.75 with an upper critical field Hc2(0) = 8.24 K. The effect of the transfer process was assessed by directly growing SC δ-MoN on an Al2O3 substrate, which showed enhanced superconductivity properties due to the nonuniformity in film thickness that the transfer process induces. The crystalline structure effect on superconductivity was studied by directly growing amorphous δ-MoN film on an amorphous SiO2/Si substrate. The amorphous film showed degraded superconducting behavior and confirmed that disorders in the crystal structure suppress superconductivity. The upper critical fields of the non-transferred δ-MoN films exceeded their Pauli paramagnetic limits, which could give rise to the existence of the Ising pairing effect, but further studies are needed to confirm this behavior.
CitationAlsaadi, R. S. (2022). Growth of Mono-Oriented Superconducting Hexagonal MoN on Amorphous Substrates. KAUST Research Repository. https://doi.org/10.25781/KAUST-8YPS4