Large-Scale and High-Quality III-Nitride Membranes Through Microcavity-Assisted Crack Propagation by Engineering Tensile-Stressed Ni Layers
Type
PreprintAuthors
Min, Jung-HongLee, Kwangjae
Chung, Tae-Hoon
Min, Jung-Wook
Li, Kuang-Hui

Kang, Chun Hong

Kwak, Hoe-Min
Kim, Tae-Hyeon
Yuan, Youyou
Kim, Kyoung-Kook
Lee, Dong-Seon
Ng, Tien Khee

Ooi, Boon S.

KAUST Department
Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaMaterial Science and Engineering
Physical Science and Engineering (PSE) Division
Electrical and Computer Engineering Program
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Physical Characterization
KAUST Grant Number
BAS/1/1614-01-01Date
2022-04-11Permanent link to this record
http://hdl.handle.net/10754/676639
Metadata
Show full item recordAbstract
Epitaxially-grown III-nitride alloys are one of tightly-bonded materials with mixed covalent-ionic bonds. This tight bonding presents tremendous challenges in developing III-nitride membranes even though the semiconductor membranes can provide numerous advantages by removing the thick, inflexible, and costly substrates. Herein, cavities with various sizes were introduced by overgrowing target layers such as undoped GaN and green LED on nanoporous templates prepared by electrochemical etching of n-type GaN. The large primary interfacial toughness was effectively reduced according to the design of the cavity density, and the overgrown target layers were then conveniently exfoliated by engineering tensile-stressed Ni layers. The resulting III-nitride membranes maintained the high crystal quality even after the exfoliation due to the use of the GaN-based nanoporous templates having the same lattice constant. The microcavity-assisted crack propagation process developed for the current III-nitride membranes forms a universal process for developing various kinds of large-scale and high-quality semiconductor membranes.Citation
Min, J.-H., Lee, K., Chung, T.-H., Min, J.-W., Li, K.-H., Kang, C. H., Kwak, H.-M., Kim, T.-H., Yuan, Y., Kim, K.-K., Lee, D.-S., Ng, T. K., & Ooi, B. S. (2022). Large-Scale and High-Quality Iii-Nitride Membranes Through Microcavity-Assisted Crack Propagation by Engineering Tensile-Stressed Ni Layers. SSRN Electronic Journal. https://doi.org/10.2139/ssrn.4080988Sponsors
Supported by King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01 and King Abdulaziz City for Science and Technology (grant no. KACST TIC R2-FP-008). This work was also supported by Korea Photonics Technology Institute (Project No. 193300029). The authors acknowledge access to the KAUST Nanofabrication Core Lab for device fabrication and Imaging and Characterization Core Lab for optical and electron microscopy measurements.Publisher
Elsevier BVAdditional Links
https://www.ssrn.com/abstract=4080988ae974a485f413a2113503eed53cd6c53
10.2139/ssrn.4080988