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    Large-Scale and High-Quality III-Nitride Membranes Through Microcavity-Assisted Crack Propagation by Engineering Tensile-Stressed Ni Layers

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    SSRN-id4080988.pdf
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    Preprint
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    Type
    Preprint
    Authors
    Min, Jung-Hong
    Lee, Kwangjae
    Chung, Tae-Hoon
    Min, Jung-Wook
    Li, Kuang-Hui cc
    Kang, Chun Hong cc
    Kwak, Hoe-Min
    Kim, Tae-Hyeon
    Yuan, Youyou
    Kim, Kyoung-Kook
    Lee, Dong-Seon
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
    Material Science and Engineering
    Physical Science and Engineering (PSE) Division
    Electrical and Computer Engineering Program
    Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
    Physical Characterization
    KAUST Grant Number
    BAS/1/1614-01-01
    Date
    2022-04-11
    Permanent link to this record
    http://hdl.handle.net/10754/676639
    
    Metadata
    Show full item record
    Abstract
    Epitaxially-grown III-nitride alloys are one of tightly-bonded materials with mixed covalent-ionic bonds. This tight bonding presents tremendous challenges in developing III-nitride membranes even though the semiconductor membranes can provide numerous advantages by removing the thick, inflexible, and costly substrates. Herein, cavities with various sizes were introduced by overgrowing target layers such as undoped GaN and green LED on nanoporous templates prepared by electrochemical etching of n-type GaN. The large primary interfacial toughness was effectively reduced according to the design of the cavity density, and the overgrown target layers were then conveniently exfoliated by engineering tensile-stressed Ni layers. The resulting III-nitride membranes maintained the high crystal quality even after the exfoliation due to the use of the GaN-based nanoporous templates having the same lattice constant. The microcavity-assisted crack propagation process developed for the current III-nitride membranes forms a universal process for developing various kinds of large-scale and high-quality semiconductor membranes.
    Citation
    Min, J.-H., Lee, K., Chung, T.-H., Min, J.-W., Li, K.-H., Kang, C. H., Kwak, H.-M., Kim, T.-H., Yuan, Y., Kim, K.-K., Lee, D.-S., Ng, T. K., & Ooi, B. S. (2022). Large-Scale and High-Quality Iii-Nitride Membranes Through Microcavity-Assisted Crack Propagation by Engineering Tensile-Stressed Ni Layers. SSRN Electronic Journal. https://doi.org/10.2139/ssrn.4080988
    Sponsors
    Supported by King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01 and King Abdulaziz City for Science and Technology (grant no. KACST TIC R2-FP-008). This work was also supported by Korea Photonics Technology Institute (Project No. 193300029). The authors acknowledge access to the KAUST Nanofabrication Core Lab for device fabrication and Imaging and Characterization Core Lab for optical and electron microscopy measurements.
    Publisher
    Elsevier BV
    DOI
    10.2139/ssrn.4080988
    Additional Links
    https://www.ssrn.com/abstract=4080988
    ae974a485f413a2113503eed53cd6c53
    10.2139/ssrn.4080988
    Scopus Count
    Collections
    Preprints; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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