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dc.contributor.authorPalanisamy, Tamilarasan
dc.contributor.authorMitra, Somak
dc.contributor.authorBatra, Nitinkumar
dc.contributor.authorSmajic, Jasmin
dc.contributor.authorEmwas, Abdul-Hamid
dc.contributor.authorRoqan, Iman S.
dc.contributor.authorDa Costa, Pedro M. F. J.
dc.date.accessioned2022-04-28T11:37:25Z
dc.date.available2022-04-28T11:37:25Z
dc.date.issued2022-04-27
dc.identifier.citationPalanisamy, T., Mitra, S., Batra, N., Smajic, J., Emwas, A., Roqan, I., & Costa, P. M. F. J. (2022). Carbon Nitride Thin Film-Sensitized Graphene Field-Effect Transistor: A Visible-Blind Ultraviolet Photodetector. Advanced Materials Interfaces, 2200313. Portico. https://doi.org/10.1002/admi.202200313
dc.identifier.issn2196-7350
dc.identifier.issn2196-7350
dc.identifier.doi10.1002/admi.202200313
dc.identifier.urihttp://hdl.handle.net/10754/676638
dc.description.abstractUltraviolet (UV) photodetectors often suffer from the lack of spectral selectivity due to strong interference from visible light. In this study, the exceptional electrical properties of graphene and the unique optical properties of carbon nitride thin films (CNTFs) are used to design visible-blind UV photodetectors. First, polycrystalline CNTFs with different thicknesses (12–94 nm) are produced by thermal vapor condensation. Compared to the bulk carbon nitride powder, these films have a considerable sp2 nitrogen deficiency, which is thickness dependent. In addition to showing a wider bandgap than the bulk counterpart, their optical absorption profile (in the ultraviolet–visible range) is unique. Critically, the absorbance falls sharply above 400 nm, making the CNTFs suitable for ultraviolet photodetection. As a result, graphene field-effect transistors (GFETs) sensitized with CNTFs show 103 A W−1 responsivity to UV radiation, a stark contrast to the negligible value obtained in the visible spectrum. The effect of film thickness on the photoresponse is determined, with the thinner CNTF leading to much better device performance. The CNTF/GFET photodetectors are also characterized by their fast response and recovery times, 0.5 and 2.0 s, respectively. These findings pave a simple route for the development of sensitive, visible-blind UV photodetectors.
dc.description.sponsorshipFinancial support from KAUST (BAS/1/1346-01-01). The Core Labs at KAUST are thanked for their technical assistance. P.T. would like to thank CSIR-CECRI, Karaikudi for the financial support (IHP-0130 and IHP-0143)
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/admi.202200313
dc.rightsArchived with thanks to Advanced Materials Interfaces
dc.titleCarbon Nitride Thin Film-Sensitized Graphene Field-Effect Transistor: A Visible-Blind Ultraviolet Photodetector
dc.typeArticle
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST) Physical Science and Engineering Division Thuwal 23955–6900 Saudi Arabia
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST) Imaging and Characterization Core Lab Thuwal 23955–6900 Saudi Arabia
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentWater Desalination and Reuse Research Center (WDRC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.identifier.journalAdvanced Materials Interfaces
dc.rights.embargodate2023-04-27
dc.eprint.versionPost-print
dc.contributor.institutionElectrodics and Electrocatalysis Division (EEC) CSIR-Central Electrochemical Research Institute (CECRI) Karaikudi Tamil Nadu 630003 India
dc.contributor.institutionJean Rouxel Institut Des Materiaux CNRS-University of Nantes Nantes 44300 France
dc.identifier.pages2200313
kaust.personPalanisamy, Tamilarasan
kaust.personMitra, Somak
kaust.personBatra, Nitinkumar
kaust.personSmajic, Jasmin
kaust.personEmwas, Abdul-Hamid
kaust.personRoqan, Iman S.
kaust.personDa Costa, Pedro M. F. J.
kaust.grant.number(BAS/1/1346-01-01
kaust.acknowledged.supportUnitCore Labs


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