The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/676406
MetadataShow full item record
AbstractIn the present work, a single-crystalline epitaxial nonpolar a-plane AlN film with in-plane two-folder symmetries was successfully achieved on an r-plane sapphire substrate, by combining physical vapor deposition and a high-temperature annealing technique. Moreover, by varying the AlN thickness, the evolution of crystalline quality and structure were systematically investigated using X-ray diffraction, Raman spectroscopy, and atomic force microscopy. The crystalline quality was much improved by the annealing treatment. Most importantly, when the thickness of AlN was increased up to 1000 nm, the AlN lattice was found to endure strong distortion along the out-of-plane direction, and the lattice showed an obvious expansion. The change of the surface morphology induced by high-temperature annealing was also tracked, and the morphology displayed structural anisotropy along the [11¯00] direction. Our results act as a crucial platform to better understand and employ the nonpolar AlN template; in particular, it is of importance for subsequent device fabrication.
CitationZhang, F., Huang, L., Zhang, J., Liang, Z., Zhang, C., Liu, S., Luo, W., Kang, J., Cao, J., Li, T., Wang, Q., & Yuan, Y. (2022). The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate. Symmetry, 14(3), 573. https://doi.org/10.3390/sym14030573
SponsorsPartly supported by the National Key R&D Program of China (No. 2021YFA0716400). This work was supported by the Guangdong Basic and Application Basic Research Foundation of Guangdong Province (Nos. 2021B1515120022, 2020A1515110891, 2019B1515120091 and 2019B1515120081). The author Fabi Zhang was sponsored by the Guangxi Scholarship Fund of Guangxi Education Department.
Except where otherwise noted, this item's license is described as Archived with thanks to Symmetry under a Creative Commons license, details at: https://creativecommons.org/licenses/by/4.0/