Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure
Hedhili, Mohamed N.
Roqan, Iman S.
KAUST DepartmentCore Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Semiconductor and Material Spectroscopy (SMS) Laboratory
Physical Science and Engineering (PSE) Division
Material Science and Engineering Program
KAUST Grant NumberBAS/1/1319-01-01
Embargo End Date2023-03-21
Permanent link to this recordhttp://hdl.handle.net/10754/676353
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AbstractObtaining p-type wide-bandgap semiconductors with a bandgap >3.5 eV is still challenging. Here, p–n junction devices based on wide-bandgap (≥4 eV) p-type MnO quantum dots (QDs) and n-type Si-doped GaN are fabricated. The p-MnO QDs are synthesized by cost-effective femtosecond laser ablation in liquid. A simple spray-coating method is used for fabricating the p-MnO/n-GaN-based solar-blind deep UV (DUV) photodetector. X-ray diffraction, transmission electron microscopy, and Raman spectroscopy reveal the MnO QD crystal structure. X-ray photoelectron microscopy analysis reveals good band alignment between p-MnO QDs and n-GaN, demonstrating the (type-II) staggered band alignment p–n heterojunction-based device. Electrical and photocurrent measurements show a high photocurrent response with a low dark current, while superior photo-responsivity (∼2530 mA/W) is achieved, along with self-powered and visible-blind characteristics (265 nm cutoff), demonstrating a high-performance DUV device with high detection limit for low light level applications. This study provides insights into the potential of p-type MnO QDs for III-nitride p–n junction DUV devices.
CitationAlamoudi, H., Xin, B., Mitra, S., Hedhili, M. N., Venkatesh, S., Almalawi, D., Alwadai, N., Alharbi, Z., Subahi, A., & Roqan, I. S. (2022). Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure. Applied Physics Letters, 120(12), 122102. https://doi.org/10.1063/5.0083259
SponsorsThe authors thank KAUST for financial support. This work was supported by the base fund (No. BAS/1/1319-01-01). D.A. acknowledges the support from the Deanship of Scientific Research of Taif University for Taif University Researchers Supporting Project No. TURSP-2020/261.
JournalApplied Physics Letters