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    Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure

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    Embargo End Date:
    2023-03-21
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    Type
    Article
    Authors
    Alamoudi, Hadeel
    Xin, Bin cc
    Mitra, Somak cc
    Hedhili, Mohamed N. cc
    Venkatesh, Singaravelu
    Almalawi, Dhaifallah
    Alwadai, Norah
    Alharbi, Zohoor
    Subahi, Ahmad
    Roqan, Iman S. cc
    KAUST Department
    Core Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
    Semiconductor and Material Spectroscopy (SMS) Laboratory
    Physical Science and Engineering (PSE) Division
    Surface Science
    Material Science and Engineering Program
    KAUST Grant Number
    BAS/1/1319-01-01
    Date
    2022-03-21
    Embargo End Date
    2023-03-21
    Permanent link to this record
    http://hdl.handle.net/10754/676353
    
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    Abstract
    Obtaining p-type wide-bandgap semiconductors with a bandgap >3.5 eV is still challenging. Here, p–n junction devices based on wide-bandgap (≥4 eV) p-type MnO quantum dots (QDs) and n-type Si-doped GaN are fabricated. The p-MnO QDs are synthesized by cost-effective femtosecond laser ablation in liquid. A simple spray-coating method is used for fabricating the p-MnO/n-GaN-based solar-blind deep UV (DUV) photodetector. X-ray diffraction, transmission electron microscopy, and Raman spectroscopy reveal the MnO QD crystal structure. X-ray photoelectron microscopy analysis reveals good band alignment between p-MnO QDs and n-GaN, demonstrating the (type-II) staggered band alignment p–n heterojunction-based device. Electrical and photocurrent measurements show a high photocurrent response with a low dark current, while superior photo-responsivity (∼2530 mA/W) is achieved, along with self-powered and visible-blind characteristics (265 nm cutoff), demonstrating a high-performance DUV device with high detection limit for low light level applications. This study provides insights into the potential of p-type MnO QDs for III-nitride p–n junction DUV devices.
    Citation
    Alamoudi, H., Xin, B., Mitra, S., Hedhili, M. N., Venkatesh, S., Almalawi, D., Alwadai, N., Alharbi, Z., Subahi, A., & Roqan, I. S. (2022). Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure. Applied Physics Letters, 120(12), 122102. https://doi.org/10.1063/5.0083259
    Sponsors
    The authors thank KAUST for financial support. This work was supported by the base fund (No. BAS/1/1319-01-01). D.A. acknowledges the support from the Deanship of Scientific Research of Taif University for Taif University Researchers Supporting Project No. TURSP-2020/261.
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/5.0083259
    Additional Links
    https://aip.scitation.org/doi/10.1063/5.0083259
    ae974a485f413a2113503eed53cd6c53
    10.1063/5.0083259
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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