Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure
Type
ArticleAuthors
Alamoudi, HadeelXin, Bin

Mitra, Somak

Hedhili, Mohamed N.

Venkatesh, Singaravelu
Almalawi, Dhaifallah
Alwadai, Norah
Alharbi, Zohoor
Subahi, Ahmad
Roqan, Iman S.

KAUST Department
Core Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaSemiconductor and Material Spectroscopy (SMS) Laboratory
Physical Science and Engineering (PSE) Division
Surface Science
Material Science and Engineering Program
KAUST Grant Number
BAS/1/1319-01-01Date
2022-03-21Embargo End Date
2023-03-21Permanent link to this record
http://hdl.handle.net/10754/676353
Metadata
Show full item recordAbstract
Obtaining p-type wide-bandgap semiconductors with a bandgap >3.5 eV is still challenging. Here, p–n junction devices based on wide-bandgap (≥4 eV) p-type MnO quantum dots (QDs) and n-type Si-doped GaN are fabricated. The p-MnO QDs are synthesized by cost-effective femtosecond laser ablation in liquid. A simple spray-coating method is used for fabricating the p-MnO/n-GaN-based solar-blind deep UV (DUV) photodetector. X-ray diffraction, transmission electron microscopy, and Raman spectroscopy reveal the MnO QD crystal structure. X-ray photoelectron microscopy analysis reveals good band alignment between p-MnO QDs and n-GaN, demonstrating the (type-II) staggered band alignment p–n heterojunction-based device. Electrical and photocurrent measurements show a high photocurrent response with a low dark current, while superior photo-responsivity (∼2530 mA/W) is achieved, along with self-powered and visible-blind characteristics (265 nm cutoff), demonstrating a high-performance DUV device with high detection limit for low light level applications. This study provides insights into the potential of p-type MnO QDs for III-nitride p–n junction DUV devices.Citation
Alamoudi, H., Xin, B., Mitra, S., Hedhili, M. N., Venkatesh, S., Almalawi, D., Alwadai, N., Alharbi, Z., Subahi, A., & Roqan, I. S. (2022). Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure. Applied Physics Letters, 120(12), 122102. https://doi.org/10.1063/5.0083259Sponsors
The authors thank KAUST for financial support. This work was supported by the base fund (No. BAS/1/1319-01-01). D.A. acknowledges the support from the Deanship of Scientific Research of Taif University for Taif University Researchers Supporting Project No. TURSP-2020/261.Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
https://aip.scitation.org/doi/10.1063/5.0083259ae974a485f413a2113503eed53cd6c53
10.1063/5.0083259