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dc.contributor.authorOu, Wei
dc.contributor.authorMei, Yang
dc.contributor.authorIida, Daisuke
dc.contributor.authorXu, Huan
dc.contributor.authorXie, Minchao
dc.contributor.authorYing, Lei Ying
dc.contributor.authorZhang, Baoping
dc.contributor.authorOhkawa, Kazuhiro
dc.contributor.authorWang, Yiwei
dc.date.accessioned2022-04-17T13:52:31Z
dc.date.available2022-04-17T13:52:31Z
dc.date.issued2022-03-23
dc.identifier.citationOu, W., Mei, Y., Iida, D., Xu, H., Xie, M., Ying, L.-Y., Zhang, B.-P., Ohkawa, K., & Wang, Y. (2022). InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes. Journal of Lightwave Technology, 1–1. https://doi.org/10.1109/jlt.2022.3161637
dc.identifier.issn1558-2213
dc.identifier.issn0733-8724
dc.identifier.doi10.1109/JLT.2022.3161637
dc.identifier.urihttp://hdl.handle.net/10754/676284
dc.description.abstractInGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs) were fabricated by using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors (DBRs). For realizing the structure of device, a substrate transfer technique was employed in process of fabrication. The device exhibited optical resonant effect, a high Q factor (~3010), and a narrow emission linewidth (FMHW ~0.2 nm), indicating low optical loss in the resonant cavity. Additionally, due to the three-dimensional (3D) optical confinement effect, the discrete modes of red emission were clearly observed in the far field via an angular resolved measurement system. And then, the energies of the photon states of a orange-red RCLED consists generally with the simulation results based on a circular waveguide model. The saturated emission intensity of the orange-red RCLED was proportional to the area of current injection. This work demonstrated the feasibility of InGaN-based electrically injected orange-red RCLEDs that are useful for the development of displays and communication systems.
dc.description.sponsorshipFunding Agency is the National Key Research and Development Program of China
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/9740450/
dc.rights(c) 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.subject3D optical confinement effect
dc.subjectAluminum nitride
dc.subjectDistributed Bragg reflectors
dc.subjectDual dielectric DBR
dc.subjectEpitaxial growth
dc.subjectIII-V semiconductor materials
dc.subjectInGaN quantum well
dc.subjectOptical reflection
dc.subjectQ-factor
dc.subjectStimulated emission
dc.titleInGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
dc.contributor.departmentElectrical and Computer Engineering Program
dc.identifier.journalJournal of Lightwave Technology
dc.eprint.versionPost-print
dc.contributor.institutionThe School of Electronic Science and Engineering, Xiamen University School of Electronic Science and Engineering, 599593 Xiamen, Fujian, China
dc.identifier.pages1-1
kaust.personIida, Daisuke
kaust.personOhkawa, Kazuhiro
dc.identifier.eid2-s2.0-85127023326
refterms.dateFOA2022-04-17T13:53:51Z


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