Performance of temperature tuned red laser diode employing self injection locking scheme
Type
Conference PaperAuthors
Mukhtar, SaniAshry, Islam

Holguin Lerma, Jorge Alberto

Ng, Tien Khee

Ooi, Boon S.

Khan, M. Z.M.
KAUST Department
Computer, Electrical and Mathematical Science and Engineering (CEMSE) DivisionElectrical and Computer Engineering Program
KAUST Grant Number
BAS/1/1614-01-01REP/1/2878-01-01
Date
2020Permanent link to this record
http://hdl.handle.net/10754/676247
Metadata
Show full item recordAbstract
First report on substantial performance improvement by 2-4 times of temperature tuned InGaP/InGaAlP/InP ~635 nm red laser diode based tunable self-injection (SIL) locked system in terms of optical linewidth, SMSR, exhibiting 7.5 nm wavelength span.Citation
Mukhtar, S., Ashry, I., Holguín-Lerma, J. A., Ng, T. K., Ooi, B. S., & Khan, M. Z. M. (2020). Performance of Temperature Tuned Red Laser Diode Employing Self Injection Locking Scheme. Frontiers in Optics / Laser Science. https://doi.org/10.1364/ls.2020.lm4f.6Sponsors
SM and MZMK would like to thank KFUPM for supporting this work, while IA, JAH, TKN and BSO acknowledge KAUST baseline funding (BAS/1/1614-01-01). All authors acknowledge funding support from KAUST-KFUPM Special Initiative (KKI) Program (REP/1/2878-01-01), and King Abdul-Aziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP- 008 and EE002381).Publisher
OSAConference/Event name
Laser Science, LS 2020 - Part of Frontiers in Optics + Laser Science APS/DLS 2020ISBN
9781557528209Additional Links
https://opg.optica.org/abstract.cfm?URI=LS-2020-LM4F.6ae974a485f413a2113503eed53cd6c53
10.1364/LS.2020.LM4F.6