Performance of temperature tuned red laser diode employing self injection locking scheme
Holguin Lerma, Jorge Alberto
Ng, Tien Khee
Ooi, Boon S.
Khan, M. Z.M.
KAUST DepartmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/676247
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AbstractFirst report on substantial performance improvement by 2-4 times of temperature tuned InGaP/InGaAlP/InP ~635 nm red laser diode based tunable self-injection (SIL) locked system in terms of optical linewidth, SMSR, exhibiting 7.5 nm wavelength span.
CitationMukhtar, S., Ashry, I., Holguín-Lerma, J. A., Ng, T. K., Ooi, B. S., & Khan, M. Z. M. (2020). Performance of Temperature Tuned Red Laser Diode Employing Self Injection Locking Scheme. Frontiers in Optics / Laser Science. https://doi.org/10.1364/ls.2020.lm4f.6
SponsorsSM and MZMK would like to thank KFUPM for supporting this work, while IA, JAH, TKN and BSO acknowledge KAUST baseline funding (BAS/1/1614-01-01). All authors acknowledge funding support from KAUST-KFUPM Special Initiative (KKI) Program (REP/1/2878-01-01), and King Abdul-Aziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP- 008 and EE002381).
Conference/Event nameLaser Science, LS 2020 - Part of Frontiers in Optics + Laser Science APS/DLS 2020