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dc.contributor.authorShushanian, Artem
dc.contributor.authorIida, Daisuke
dc.contributor.authorZhuang, Zhe
dc.contributor.authorHan, Yu
dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2022-02-09T08:44:59Z
dc.date.available2022-02-09T08:44:59Z
dc.date.issued2022-02-07
dc.date.submitted2021-10-31
dc.identifier.citationShushanian, Iida, D., Zhuang, Z., Han, Y., & Ohkawa, K. (2022). Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid. RSC Advances, 12(8), 4648–4655. https://doi.org/10.1039/d1ra07992a
dc.identifier.issn2046-2069
dc.identifier.doi10.1039/d1ra07992a
dc.identifier.urihttp://hdl.handle.net/10754/675474
dc.description.abstractWe studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://xlink.rsc.org/?DOI=D1RA07992A
dc.rightsThis article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.titleAnalysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid
dc.typeArticle
dc.contributor.departmentChemical Science
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
dc.contributor.departmentChemical Science Program
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Center
dc.contributor.departmentElectrical and Computer Engineering Program
dc.identifier.journalRSC Advances
dc.eprint.versionPublisher's Version/PDF
dc.identifier.volume12
dc.identifier.issue8
dc.identifier.pages4648-4655
kaust.personShushanian, Artem
kaust.personIida, Daisuke
kaust.personZhuang, Zhe
kaust.personHan, Yu
kaust.personOhkawa, Kazuhiro
dc.date.accepted2022-01-25
refterms.dateFOA2022-02-09T08:46:04Z


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