Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid
KAUST DepartmentChemical Science
Physical Science and Engineering (PSE) Division
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Chemical Science Program
Advanced Membranes and Porous Materials Research Center
Electrical and Computer Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/675474
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AbstractWe studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.
CitationShushanian, Iida, D., Zhuang, Z., Han, Y., & Ohkawa, K. (2022). Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid. RSC Advances, 12(8), 4648–4655. https://doi.org/10.1039/d1ra07992a
PublisherRoyal Society of Chemistry (RSC)
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