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dc.contributor.authorLoganathan, Kalaivanan
dc.contributor.authorScaccabarozzi, Alberto D.
dc.contributor.authorFaber, Hendrik
dc.contributor.authorFerrari, Federico
dc.contributor.authorBizak, Zhanibek
dc.contributor.authorYengel, Emre
dc.contributor.authorNaphade, Dipti R.
dc.contributor.authorGedda, Murali
dc.contributor.authorHe, Qiao
dc.contributor.authorSolomeshch, Olga
dc.contributor.authorAdilbekova, Begimai
dc.contributor.authorYarali, Emre
dc.contributor.authorTsetseris, Leonidas
dc.contributor.authorSalama, Khaled N.
dc.contributor.authorHeeney, Martin
dc.contributor.authorTessler, Nir
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2022-01-18T10:16:50Z
dc.date.available2022-01-18T10:16:50Z
dc.date.issued2022-01-06
dc.date.submitted2021-10-23
dc.identifier.citationLoganathan, K., Scaccabarozzi, A. D., Faber, H., Ferrari, F., Bizak, Z., Yengel, E., … Anthopoulos, T. D. (2022). 14 GHz Schottky Diodes using a p -Doped Organic Polymer. Advanced Materials, 2108524. doi:10.1002/adma.202108524
dc.identifier.issn0935-9648
dc.identifier.issn1521-4095
dc.identifier.pmid34990058
dc.identifier.doi10.1002/adma.202108524
dc.identifier.urihttp://hdl.handle.net/10754/675019
dc.description.abstractThe low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography, with a high mobility organic semiconductor and demonstrate RF Schottky diodes able to operate in the 5G frequency spectrum. We used C<sub>16</sub> IDT-BT, as the high hole mobility polymer, and studied the impact of p-doping on the diode performance. Pristine C<sub>16</sub> IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (f<sub>C</sub> ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed primarily to the planar nature of the nanogap channel and the diode's small junction capacitance (< 2 pF). Doping of C<sub>16</sub> IDT-BT with the molecular p-dopant C<sub>60</sub> F<sub>48</sub> , improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic f<sub>C</sub> of >100 and ∼14 GHz respectively, while the DC output voltage of a RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area radio frequency electronics of the future. This article is protected by copyright. All rights reserved.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/adma.202108524
dc.rightsArchived with thanks to Advanced Materials
dc.subjectOrganic Semiconductor
dc.subjectPrinted Electronics
dc.subjectSchottky Diodes
dc.subjectRectifier Circuits
dc.subjectRadio Frequency Electronics
dc.title14 GHz Schottky Diodes using a p -Doped Organic Polymer
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentBioengineering Program
dc.contributor.departmentBiological and Environmental Science and Engineering (BESE) Division
dc.contributor.departmentElectrical and Computer Engineering
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST) KAUST Solar Center (KSC) Thuwal 23955–6900 Saudi Arabia
dc.contributor.departmentElectrical and Computer Engineering Program
dc.identifier.journalAdvanced Materials
dc.rights.embargodate2023-01-06
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Chemistry and Centre for Processable Electronics Imperial College London London W12 0BZ United Kingdom
dc.contributor.institutionThe Zisapel Nano-Electronic Center Department of Electrical Engineering Technion-Israel Institute of Technology Haifa 3200 Israel
dc.contributor.institutionDepartment of Physics National Technical University of Athens Athens GR-15780 Greece
dc.identifier.pages2108524
kaust.personLoganathan, Kalaivanan
kaust.personScaccabarozzi, Alberto Davide
kaust.personFaber, Hendrik
kaust.personFerrari, Federico
kaust.personBizak, Zhanibek
kaust.personYengel, Emre
kaust.personNaphade, Dipti R.
kaust.personGedda, Murali
kaust.personAdilbekova, Begimai
kaust.personYarali, Emre
kaust.personSalama, Khaled N.
kaust.personAnthopoulos, Thomas D.
dc.date.accepted2022-01-06
refterms.dateFOA2022-01-18T10:22:13Z


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