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Advanced Materials - 2022 - Loganathan - 14 GHz Schottky Diodes using a p‐Doped Organic Polymer.pdf
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ArticleAuthors
Loganathan, Kalaivanan
Scaccabarozzi, Alberto D.

Faber, Hendrik

Ferrari, Federico
Bizak, Zhanibek
Yengel, Emre

Naphade, Dipti
Gedda, Murali

He, Qiao
Solomeshch, Olga
Adilbekova, Begimai

Yarali, Emre

Tsetseris, Leonidas
Salama, Khaled N.

Heeney, Martin

Tessler, Nir
Anthopoulos, Thomas D.

KAUST Department
Advanced Membranes and Porous Materials Research CenterBioengineering Program
Biological and Environmental Science and Engineering (BESE) Division
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering
Electrical and Computer Engineering Program
KAUST Solar Center (KSC)
King Abdullah University of Science and Technology (KAUST) KAUST Solar Center (KSC) Thuwal 23955–6900 Saudi Arabia
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Sensors Lab
Date
2022-01-06Embargo End Date
2023-01-06Submitted Date
2021-10-23Permanent link to this record
http://hdl.handle.net/10754/675019
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Show full item recordAbstract
The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography, with a high mobility organic semiconductor and demonstrate RF Schottky diodes able to operate in the 5G frequency spectrum. We used C<sub>16</sub> IDT-BT, as the high hole mobility polymer, and studied the impact of p-doping on the diode performance. Pristine C<sub>16</sub> IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (f<sub>C</sub> ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed primarily to the planar nature of the nanogap channel and the diode's small junction capacitance (< 2 pF). Doping of C<sub>16</sub> IDT-BT with the molecular p-dopant C<sub>60</sub> F<sub>48</sub> , improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic f<sub>C</sub> of >100 and ∼14 GHz respectively, while the DC output voltage of a RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area radio frequency electronics of the future. This article is protected by copyright. All rights reserved.Citation
Loganathan, K., Scaccabarozzi, A. D., Faber, H., Ferrari, F., Bizak, Z., Yengel, E., … Anthopoulos, T. D. (2022). 14 GHz Schottky Diodes using a p -Doped Organic Polymer. Advanced Materials, 2108524. doi:10.1002/adma.202108524Publisher
WileyJournal
Advanced MaterialsPubMed ID
34990058Additional Links
https://onlinelibrary.wiley.com/doi/10.1002/adma.202108524ae974a485f413a2113503eed53cd6c53
10.1002/adma.202108524
Scopus Count
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Articles; Bioengineering Program; Biological and Environmental Science and Engineering (BESE) Division; Advanced Membranes and Porous Materials Research Center; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Sensors Lab; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Science and Engineering (CEMSE) DivisionRelated articles
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