Scaccabarozzi, Alberto D.
Salama, Khaled N.
Anthopoulos, Thomas D.
KAUST DepartmentAdvanced Membranes and Porous Materials Research Center
Biological and Environmental Science and Engineering (BESE) Division
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering
Electrical and Computer Engineering Program
KAUST Solar Center (KSC)
King Abdullah University of Science and Technology (KAUST) KAUST Solar Center (KSC) Thuwal 23955–6900 Saudi Arabia
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Embargo End Date2023-01-06
Permanent link to this recordhttp://hdl.handle.net/10754/675019
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AbstractThe low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography, with a high mobility organic semiconductor and demonstrate RF Schottky diodes able to operate in the 5G frequency spectrum. We used C<sub>16</sub> IDT-BT, as the high hole mobility polymer, and studied the impact of p-doping on the diode performance. Pristine C<sub>16</sub> IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (f<sub>C</sub> ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed primarily to the planar nature of the nanogap channel and the diode's small junction capacitance (< 2 pF). Doping of C<sub>16</sub> IDT-BT with the molecular p-dopant C<sub>60</sub> F<sub>48</sub> , improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic f<sub>C</sub> of >100 and ∼14 GHz respectively, while the DC output voltage of a RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area radio frequency electronics of the future. This article is protected by copyright. All rights reserved.
CitationLoganathan, K., Scaccabarozzi, A. D., Faber, H., Ferrari, F., Bizak, Z., Yengel, E., … Anthopoulos, T. D. (2022). 14 GHz Schottky Diodes using a p -Doped Organic Polymer. Advanced Materials, 2108524. doi:10.1002/adma.202108524
CollectionsArticles; Bioengineering Program; Biological and Environmental Science and Engineering (BESE) Division; Advanced Membranes and Porous Materials Research Center; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Sensors Lab; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
- Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN).
- Authors: Georgiadou DG, Wijeyasinghe N, Solomeshch O, Tessler N, Anthopoulos TD
- Issue date: 2022 Jul 6
- Rapid and up-scalable manufacturing of gigahertz nanogap diodes.
- Authors: Loganathan K, Faber H, Yengel E, Seitkhan A, Bakytbekov A, Yarali E, Adilbekova B, AlBatati A, Lin Y, Felemban Z, Yang S, Li W, Georgiadou DG, Shamim A, Lidorikis E, Anthopoulos TD
- Issue date: 2022 Jun 7
- Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications.
- Authors: Alathbah M
- Issue date: 2022 Dec 20
- Radio Frequency Coplanar ZnO Schottky Nanodiodes Processed from Solution on Plastic Substrates.
- Authors: Semple J, Rossbauer S, Burgess CH, Zhao K, Jagadamma LK, Amassian A, McLachlan MA, Anthopoulos TD
- Issue date: 2016 Apr
- Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature.
- Authors: Semple J, Rossbauer S, Anthopoulos TD
- Issue date: 2016 Sep 7