14 GHz Schottky Diodes using a p -Doped Organic Polymer

Abstract

The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography, with a high mobility organic semiconductor and demonstrate RF Schottky diodes able to operate in the 5G frequency spectrum. We used C₁₆ IDT-BT, as the high hole mobility polymer, and studied the impact of p-doping on the diode performance. Pristine C₁₆ IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (f_C ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed primarily to the planar nature of the nanogap channel and the diode's small junction capacitance (< 2 pF). Doping of C₁₆ IDT-BT with the molecular p-dopant C₆₀ F₄₈ , improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic f_C of >100 and ∼14 GHz respectively, while the DC output voltage of a RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area radio frequency electronics of the future. This article is protected by copyright. All rights reserved.