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    14 GHz Schottky Diodes using a p -Doped Organic Polymer

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    Advanced Materials - 2022 - Loganathan - 14 GHz Schottky Diodes using a p‐Doped Organic Polymer.pdf
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    1.070Mb
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    Type
    Article
    Authors
    Loganathan, Kalaivanan cc
    Scaccabarozzi, Alberto D. cc
    Faber, Hendrik cc
    Ferrari, Federico
    Bizak, Zhanibek
    Yengel, Emre cc
    Naphade, Dipti
    Gedda, Murali cc
    He, Qiao
    Solomeshch, Olga
    Adilbekova, Begimai cc
    Yarali, Emre cc
    Tsetseris, Leonidas
    Salama, Khaled N. cc
    Heeney, Martin cc
    Tessler, Nir
    Anthopoulos, Thomas D. cc
    KAUST Department
    Advanced Membranes and Porous Materials Research Center
    Bioengineering Program
    Biological and Environmental Science and Engineering (BESE) Division
    Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
    Electrical and Computer Engineering
    Electrical and Computer Engineering Program
    KAUST Solar Center (KSC)
    King Abdullah University of Science and Technology (KAUST) KAUST Solar Center (KSC) Thuwal 23955–6900 Saudi Arabia
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Sensors Lab
    Date
    2022-01-06
    Embargo End Date
    2023-01-06
    Submitted Date
    2021-10-23
    Permanent link to this record
    http://hdl.handle.net/10754/675019
    
    Metadata
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    Abstract
    The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography, with a high mobility organic semiconductor and demonstrate RF Schottky diodes able to operate in the 5G frequency spectrum. We used C<sub>16</sub> IDT-BT, as the high hole mobility polymer, and studied the impact of p-doping on the diode performance. Pristine C<sub>16</sub> IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (f<sub>C</sub> ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed primarily to the planar nature of the nanogap channel and the diode's small junction capacitance (< 2 pF). Doping of C<sub>16</sub> IDT-BT with the molecular p-dopant C<sub>60</sub> F<sub>48</sub> , improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic f<sub>C</sub> of >100 and ∼14 GHz respectively, while the DC output voltage of a RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area radio frequency electronics of the future. This article is protected by copyright. All rights reserved.
    Citation
    Loganathan, K., Scaccabarozzi, A. D., Faber, H., Ferrari, F., Bizak, Z., Yengel, E., … Anthopoulos, T. D. (2022). 14 GHz Schottky Diodes using a p -Doped Organic Polymer. Advanced Materials, 2108524. doi:10.1002/adma.202108524
    Publisher
    Wiley
    Journal
    Advanced Materials
    DOI
    10.1002/adma.202108524
    PubMed ID
    34990058
    Additional Links
    https://onlinelibrary.wiley.com/doi/10.1002/adma.202108524
    ae974a485f413a2113503eed53cd6c53
    10.1002/adma.202108524
    Scopus Count
    Collections
    Articles; Bioengineering Program; Biological and Environmental Science and Engineering (BESE) Division; Advanced Membranes and Porous Materials Research Center; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Sensors Lab; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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