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dc.contributor.authorKafourou, Panagiota
dc.contributor.authorNugraha, Mohamad Insan
dc.contributor.authorNikitaras, Aggelos
dc.contributor.authorTan, Luxi
dc.contributor.authorFirdaus, Yuliar
dc.contributor.authorAniés, Filip
dc.contributor.authorEisner, Flurin D.
dc.contributor.authorDing, Bowen
dc.contributor.authorWenzel, Jonas
dc.contributor.authorHolicky, Martin
dc.contributor.authorTsetseris, Leonidas
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorHeeney, Martin
dc.date.accessioned2022-01-17T13:30:53Z
dc.date.available2022-01-17T13:30:53Z
dc.date.issued2021-12-17
dc.identifier.citationKafourou, P., Nugraha, M. I., Nikitaras, A., Tan, L., Firdaus, Y., Aniés, F., … Heeney, M. (2021). Near-IR Absorbing Molecular Semiconductors Incorporating Cyanated Benzothiadiazole Acceptors for High-Performance Semitransparent n-Type Organic Field-Effect Transistors. ACS Materials Letters, 165–174. doi:10.1021/acsmaterialslett.1c00635
dc.identifier.issn2639-4979
dc.identifier.issn2639-4979
dc.identifier.doi10.1021/acsmaterialslett.1c00635
dc.identifier.urihttp://hdl.handle.net/10754/675005
dc.description.abstractSmall band gap molecular semiconductors are of interest for the development of transparent electronics. Here we report two near-infrared (NIR), n-type small molecule semiconductors, based upon an acceptor-donor-acceptor (A-D-A) approach. We show that the inclusion of molecular spacers between the strong-electron-accepting end group, 2,1,3-benzothiadiazole-4,5,6-tricarbonitrile, and the donor core affords semiconductors with very low band gaps down to 1 eV. Both materials were synthesized by a one-pot, 6-fold nucleophilic displacement of a fluorinated precursor by cyanide. Significant differences in solid-state ordering and charge carrier mobility are observed depending on the nature of the spacer, with a thiophene spacer resulting in solution processed organic field-effect transistors (OFETs) exhibiting excellent electron mobility up to 1.1 cm2 V-1 s-1. The use of silver nanowires as the gate electrode enables the fabrication of a semitransparent OFET device with an average visible transmission of 71% in the optical spectrum.
dc.description.sponsorshipThe authors thank the Engineering and Physical Sciences Research Council (EPSRC) (EP/L016702/1 and EP/T028513/1), Global Research Laboratory Program of the National Research Foundation (NRF-2017K1A1A2013153), the Royal Society, and the Wolfson Foundation (Royal Society Wolfson Fellowship) for funding. M.I.N., M.H., and T.D.A. acknowledge funding from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award Nos. OSR-2018-CARF/CCF-3079 and OSR-2020-CRG8-4095. F.E. thanks EPSRC for support via a Doctoral Prize Fellowship.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsmaterialslett.1c00635
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Materials Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsmaterialslett.1c00635.
dc.titleNear-IR Absorbing Molecular Semiconductors Incorporating Cyanated Benzothiadiazole Acceptors for High-Performance Semitransparent n-Type Organic Field-Effect Transistors
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.identifier.journalACS Materials Letters
dc.rights.embargodate2022-12-17
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K.
dc.contributor.institutionDepartment of Physics, National Technical University of Athens, Zografou Campus, Athens 15780, Greece
dc.contributor.institutionSchool of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China
dc.contributor.institutionResearch Center for Electronics and Telecommunication, National Research and Innovation Agency, Jalan Sangkuriang Komplek LIPI Building 20 Level 4, Bandung 40135, Indonesia
dc.contributor.institutionDepartment of Physics and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K.
dc.identifier.pages165-174
kaust.personNugraha, Mohamad Insan
kaust.personFirdaus, Yuliar
kaust.personAnthopoulos, Thomas D.
kaust.grant.numberOSR-2020-CRG8-4095
kaust.grant.numberOSR-2018-CARF/CCF-3079
dc.identifier.eid2-s2.0-85121904369
kaust.acknowledged.supportUnitOffice of Sponsored Research (OSR)


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