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dc.contributor.authorKim, Kwan-Ho
dc.contributor.authorOh, Seyong
dc.contributor.authorFiagbenu, Merrilyn Mercy Adzo
dc.contributor.authorZheng, Jeffrey
dc.contributor.authorMusavigharavi, Pariasadat
dc.contributor.authorKumar, Pawan
dc.contributor.authorTrainor, Nicholas
dc.contributor.authorAljarb, Areej
dc.contributor.authorWan, Yi
dc.contributor.authorKim, Hyong Min
dc.contributor.authorKatti, Keshava
dc.contributor.authorTang, Zichen
dc.contributor.authorTung, Vincent
dc.contributor.authorRedwing, Joan
dc.contributor.authorStach, Eric A.
dc.contributor.authorIII, Roy H. Olsson
dc.contributor.authorJariwala, Deep
dc.date.accessioned2022-01-11T12:42:22Z
dc.date.available2022-01-11T12:42:22Z
dc.date.issued2022-01-06
dc.identifier.urihttp://hdl.handle.net/10754/674910
dc.description.abstractIntimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.
dc.description.sponsorshipThis material is based upon work supported by the Defense Advanced Research Projects Agency (DARPA) TUFEN program under Agreement No. HR00112090046The work was carried out in part at the Singh Center for Nanotechnology at the University of Pennsylvania which is supported by the National Science Foundation (NSF) National Nanotechnology Coordinated Infrastructure Program (NSF grant NNCI-1542153). H.M.K., K.K. and D.J. acknowledge support from Penn Center for Undergraduate Research and Fellowships. The authors gratefully acknowledge use of facilities and instrumentation supported by NSF through the University of Pennsylvania Materials Research Science and Engineering Center (MRSEC) (DMR-1720530). P.K., E. A. S. and D. J. also acknowledge partial support from NSF DMR Electronic Photonic and Magnetic Materials (EPM) core program (Grant No. DMR1905853)as well as the University of Pennsylvania Laboratory for Research on the Structure of Matter, a Materials Research Science and Engineering Center (MRSEC) supported by the National Science Foundation (No. DMR-1720530). A.A., Y.W., and V.T. are indebted to the support from the King Abdullah University of Science and Technology (KAUST) Solar Center and Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079. The MOCVD grown MoS2 monolayer samples were provided by the 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) facility at the Pennsylvania State University, which is funded by the NSF under cooperative agreement no. DMR-1539916.
dc.publisherarXiv
dc.relation.urlhttps://arxiv.org/pdf/2201.02153.pdf
dc.rightsArchived with thanks to arXiv
dc.titleScalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
dc.typePreprint
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering
dc.eprint.versionPre-print
dc.contributor.institutionDepartment of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
dc.contributor.institutionQuerrey Simpson Institute for Bioelectronics, Northwestern University, Evanston, IL, USA
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA
dc.contributor.institutionDepartment of Materials Science and Engineering, Pennsylvania State University, State College, PA, USA.
dc.contributor.institutionDepartment of Physics, King Abdulaziz University (KAAU), Jeddah 23955-6900, Saudi Arabia
dc.contributor.institutionDepartment of Chemical System and Engineering, University of Tokyo, Tokyo, Japan
dc.identifier.arxivid2201.02153
kaust.personAljarb, Areej
kaust.personWan, Yi
kaust.personTung, Vincent
kaust.grant.numberOSR-2018-CARF/CCF-3079
refterms.dateFOA2022-01-11T12:49:57Z
kaust.acknowledged.supportUnitCARF
kaust.acknowledged.supportUnitCCF
kaust.acknowledged.supportUnitOSR
kaust.acknowledged.supportUnitSponsored Research


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