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    Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs

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    Type
    Preprint
    Authors
    Kim, Kwan-Ho
    Oh, Seyong
    Fiagbenu, Merrilyn Mercy Adzo
    Zheng, Jeffrey
    Musavigharavi, Pariasadat
    Kumar, Pawan
    Trainor, Nicholas
    Aljarb, Areej cc
    Wan, Yi cc
    Kim, Hyong Min
    Katti, Keshava
    Tang, Zichen
    Tung, Vincent cc
    Redwing, Joan
    Stach, Eric A.
    III, Roy H. Olsson
    Jariwala, Deep
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Material Science and Engineering
    KAUST Grant Number
    OSR-2018-CARF/CCF-3079
    Date
    2022-01-06
    Permanent link to this record
    http://hdl.handle.net/10754/674910
    
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    Abstract
    Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.
    Sponsors
    This material is based upon work supported by the Defense Advanced Research Projects Agency (DARPA) TUFEN program under Agreement No. HR00112090046The work was carried out in part at the Singh Center for Nanotechnology at the University of Pennsylvania which is supported by the National Science Foundation (NSF) National Nanotechnology Coordinated Infrastructure Program (NSF grant NNCI-1542153). H.M.K., K.K. and D.J. acknowledge support from Penn Center for Undergraduate Research and Fellowships. The authors gratefully acknowledge use of facilities and instrumentation supported by NSF through the University of Pennsylvania Materials Research Science and Engineering Center (MRSEC) (DMR-1720530). P.K., E. A. S. and D. J. also acknowledge partial support from NSF DMR Electronic Photonic and Magnetic Materials (EPM) core program (Grant No. DMR1905853)as well as the University of Pennsylvania Laboratory for Research on the Structure of Matter, a Materials Research Science and Engineering Center (MRSEC) supported by the National Science Foundation (No. DMR-1720530). A.A., Y.W., and V.T. are indebted to the support from the King Abdullah University of Science and Technology (KAUST) Solar Center and Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079. The MOCVD grown MoS2 monolayer samples were provided by the 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) facility at the Pennsylvania State University, which is funded by the NSF under cooperative agreement no. DMR-1539916.
    Publisher
    arXiv
    arXiv
    2201.02153
    Additional Links
    https://arxiv.org/pdf/2201.02153.pdf
    Collections
    Preprints; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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