Resistive Switching Devices Producing Giant Random Telegraph Noise

Type
Article

Authors
Becker, Thales
Li, Xuehua
Moser, Eduardo
Alves, Pedro
Wirth, Gilson
Lanza, Mario

KAUST Department
Physical Science and Engineering (PSE) Division

Online Publication Date
2021

Print Publication Date
2022-01

Date
2021-11-30

Abstract
Resistive switching (RS) has been studied for several applications such as information storage and bio-inspired computing, although reliability issues still prevent their massive use. In this work, we present a novel observation of trapping activity that imposes giant random conductance fluctuations, up to 3 orders of magnitude, resembling RTN in RS devices based on TiO2, HfO2 and hexagonal boron nitride (h-BN) under reading voltages (~ 0.1 V). These events appeared reproducible for all the aforementioned RS device types in sequential measurements and under different bias. This behavior is very beneficial to ensure recognition of the device’s two-state in applications such as stochastic computing integrated circuits (ICs).

Citation
Becker, T., Li, X., Moser, E., Alves, P., Wirth, G., & Lanza, M. (2021). Resistive Switching Devices Producing Giant Random Telegraph Noise. IEEE Electron Device Letters, 1–1. doi:10.1109/led.2021.3131863

Acknowledgements
This work has been supported by the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200), and the National Natural Science Foundation of China (grants no. 11661131002, 61874075), the Ministry of Finance of China (grant no. SX21400213).

Publisher
IEEE

Journal
IEEE Electron Device Letters

DOI
10.1109/LED.2021.3131863

Additional Links
https://ieeexplore.ieee.org/document/9631285/https://ieeexplore.ieee.org/document/9631285/https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9631285

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