Recent progress in red light-emitting diodes by III-nitride materials
KAUST DepartmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
KAUST Grant NumberBAS/1/1676-01-01
Permanent link to this recordhttp://hdl.handle.net/10754/673367
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AbstractGaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be next-generation RGB displays and illumination tools. These emitting devices have been realized with highly efficient blue and green light-emitting diodes (LEDs) and laser diodes (LDs). Extending them to longer wavelength emissions remains challenging from an efficiency perspective. In the emerging research field of micro-LED displays, III-nitride red LEDs are in high demand to establish highly efficient devices like conventional blue and green systems. In this review, we describe fundamental issues in the development of red LEDs by III-nitrides. We also focus on the key role of growth techniques such as higher temperature growth, strain engineering, nanostructures, and Eu doping. The recent progress and prospect of developing III-nitride-based red light-emitting devices will be presented.
CitationIida, D., & Ohkawa, K. (2021). Recent progress in red light-emitting diodes by III-nitride materials. Semiconductor Science and Technology. doi:10.1088/1361-6641/ac3962
SponsorsSome results used in this paper were financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).
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