Standards for the Characterization of Endurance in Resistive Switching Devices
Type
ArticleAuthors
Lanza, Mario
Waser, Rainer
Ielmini, Daniele
Yang, J. Joshua
Goux, Ludovic
Suñe, Jordi
Kenyon, Anthony Joseph
Mehonic, Adnan
Spiga, Sabina

Rana, Vikas
Wiefels, Stefan
Menzel, Stephan

Valov, Ilia

Villena, Marco A.
Miranda, Enrique
Jing, Xu
Campabadal, Francesca
Gonzalez, Mireia B.
Aguirre, Fernando
Palumbo, Felix
Zhu, Kaichen
Roldan, Juan Bautista
Puglisi, Francesco Maria
Larcher, Luca
Hou, Tuo-Hung

Prodromakis, Themis
Yang, Yuchao

Huang, Peng

Wan, Tianqing
Chai, Yang
Pey, Kin Leong

Raghavan, Nagarajan

Dueñas, Salvador
Wang, Tao
Xia, Qiangfei
Pazos, Sebastian Matias

KAUST Department
Physical Science and Engineering (PSE) DivisionDate
2021-11-03Submitted Date
2021-08-14Permanent link to this record
http://hdl.handle.net/10754/673119
Metadata
Show full item recordAbstract
Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.Citation
Lanza, M., Waser, R., Ielmini, D., Yang, J. J., Goux, L., Suñe, J., … Pazos, S. (2021). Standards for the Characterization of Endurance in Resistive Switching Devices. ACS Nano. doi:10.1021/acsnano.1c06980Sponsors
This work has been supported by the generous Baseline funding program of the King Abdullah University of Science and Technology (KAUST).Publisher
American Chemical Society (ACS)Journal
ACS NanoAdditional Links
https://pubs.acs.org/doi/10.1021/acsnano.1c06980ae974a485f413a2113503eed53cd6c53
10.1021/acsnano.1c06980
Scopus Count
Except where otherwise noted, this item's license is described as https://creativecommons.org/licenses/by-nc-nd/4.0/