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dc.contributor.authorXu, Xiangming
dc.contributor.authorGuo, Tianchao
dc.contributor.authorHota, Mrinal Kanti
dc.contributor.authorKim, Hyunho
dc.contributor.authorZheng, Dongxing
dc.contributor.authorLiu, Chen
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorAlsaadi, Rajeh S.
dc.contributor.authorZhang, Xixiang
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2021-11-03T08:26:56Z
dc.date.available2021-11-03T08:26:56Z
dc.date.issued2021-10-31
dc.date.submitted2021-09-16
dc.identifier.citationXu, X., Guo, T., Hota, M. K., Kim, H., Zheng, D., Liu, C., … Alshareef, H. N. (2021). High-Yield Ti 3 C 2 T x MXene-MoS 2 Integrated Circuits. Advanced Materials, 2107370. doi:10.1002/adma.202107370
dc.identifier.issn0935-9648
dc.identifier.issn1521-4095
dc.identifier.doi10.1002/adma.202107370
dc.identifier.urihttp://hdl.handle.net/10754/673092
dc.description.abstractIt is very challenging to employ solution-processed conducting films in large-area ultrathin nanoelectronics. In this manuscript, spray-coated Ti3C2Tx MXene films as metal contacts are successfully integrated into sub-10 nm gate oxide two-dimensional (2D) MoS2 transistor circuits. The Ti3C2Tx films are prepared on glass substrates by a spray coating process followed by vacuum annealing. Compared to the as-prepared sample, the films after a vacuum annealing exhibit a higher conductivity (∼ 11,000 S/cm) and a lower work function (∼ 4.5 eV). Besides, the annealed Ti3C2Tx film can be patterned through a standard cleanroom process without peeling-off. The annealed Ti3C2Tx film shows a better band alignment for n-type transport in MoS2 channel with small work function mismatch of 0.06 eV. The MoS2 film can be uniformly transferred on the patterned Ti3C2Tx surface and then readily processed through the cleanroom process. A large-area array of Ti3C2Tx MXene-MoS2 transistors is fabricated using different dielectric thicknesses and semiconducting channel sizes. We demonstrate high yield and stable performance for these transistor arrays even with an 8 nm thick dielectric layer. Besides, several circuits are demonstrated, including rectifiers, NMOS inverters, and voltage-shift NMOS inverters. Overall, this work indicates the tremendous potential for solution-processed Ti3C2Tx MXene films in large-area 2D nanoelectronics.
dc.description.sponsorshipXiangming Xu and Tianchao Guo contributed equally to this work. We appreciate Enze Xu, a 4-year-old boy, for providing his favorite toys to fabricate the home-made automatic spray system. Research reported in this publication was funded by King Abdullah University of Science and Technology (KAUST).
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/adma.202107370
dc.rightsArchived with thanks to Advanced Materials
dc.titleHigh-Yield Ti 3 C 2 T x MXene-MoS 2 Integrated Circuits
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentMaterials Science and Engineering Physical Science and Engineering King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi Arabia
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSurface Science
dc.identifier.journalAdvanced Materials
dc.rights.embargodate2022-10-31
dc.eprint.versionPost-print
dc.identifier.pages2107370
kaust.personXu, Xiangming
kaust.personGuo, Tianchao
kaust.personHota, Mrinal Kanti
kaust.personKim, Hyunho
kaust.personZheng, Dongxing
kaust.personLiu, Chen
kaust.personHedhili, Mohamed N.
kaust.personAlsaadi, Rajeh S.
kaust.personZhang, Xixiang
kaust.personAlshareef, Husam N.
dc.date.accepted2021-10-31
refterms.dateFOA2021-11-03T08:28:35Z


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