Show simple item record

dc.contributor.authorAguirre, Fernando L.
dc.contributor.authorPazos, Sebastian M.
dc.contributor.authorPalumbo, Felix
dc.contributor.authorSune, Jordi
dc.contributor.authorMiranda, Enrique
dc.date.accessioned2021-10-27T13:49:56Z
dc.date.available2021-10-27T13:49:56Z
dc.date.issued2021-09-23
dc.date.submitted2021-07-01
dc.identifier.citationAguirre, F. L., Pazos, S. M., Palumbo, F., Suñé, J., & Miranda, E. (2021). SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model. Frontiers in Physics, 9. doi:10.3389/fphy.2021.735021
dc.identifier.issn2296-424X
dc.identifier.doi10.3389/fphy.2021.735021
dc.identifier.urihttp://hdl.handle.net/10754/672986
dc.description.abstractWe thoroughly investigate the performance of the Dynamic Memdiode Model (DMM) when used for simulating the synaptic weights in large RRAM-based cross-point arrays (CPA) intended for neuromorphic computing. The DMM is in line with Prof. Chua’s memristive devices theory, in which the hysteresis phenomenon in electroformed metal-insulator-metal structures is represented by means of two coupled equations: one equation for the current-voltage characteristic of the device based on an extension of the quantum point-contact (QPC) model for dielectric breakdown and a second equation for the memory state, responsible for keeping track of the previous history of the device. By considering $^{ex-situ} training of the CPA aimed at classifying the handwritten characters of the MNIST database, we evaluate the performance of a Write-Verify iterative scheme for setting the crosspoint conductances to their target values. The total programming time, the programming error, and the inference accuracy obtained with such writing scheme are investigated in depth. The role played by parasitic components such as the line resistance as well as some CPA’s particular features like the dynamical range of the memdiodes are discussed. The interrelationship between the frequency and amplitude values of the write pulses is explored in detail. In addition, the effect of the resistance shift for the case of a CPA programmed with no errors is studied for a variety of input signals, providing a design guideline for selecting the appropriate pulse's amplitude and frequency.
dc.description.sponsorshipThis work was supported in part by the Argentine Ministerio de Ciencia, Tecnología e Innovación (MINCyT) under Contract PICTE 2018-0192, Contract PICT 2016/0579, and Contract PME 2015-0196; in part by the CONICET under Project PIP-11220130100077CO; and in part by the UTN-FRBA under Project PID-UTN EIUTIBA4395TC3, Project PID-UTN CCUTIBA4764TC, Project PID-UTN MATUNBA4936, Project PID-UTN CCUTNBA5182, and Project PID-UTN CCUTNBA6615. The work of JS and EM was supported by the TEC2017-84321-C4-4-R project (Spanish Ministerio de Ciencia e Innovación). This work is supported by the EMPIR 20FUN06 MEMQuD project with funds from the EMPIR program co-financed by the Participating States and from the European Union’s Horizon 2020 research and innovation program. S.P. is currently also with the Physical Sciences and Engineering Division of the King Abdullah University of Science and Technology.
dc.publisherFrontiers Media SA
dc.relation.urlhttps://www.frontiersin.org/articles/10.3389/fphy.2021.735021/full
dc.rightsThis is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectRRAM
dc.subjectresistive switching
dc.subjectcross-point
dc.subjectmemristor
dc.subjectneuromorphic
dc.subjectpattern recognition
dc.subjectwrite-verify
dc.subjectfrequency
dc.titleSPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model
dc.typeArticle
dc.contributor.departmentKAUST
dc.identifier.journalFRONTIERS IN PHYSICS
dc.identifier.wosutWOS:000704721500001
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionUnidad de Investigación y Desarrollo de las Ingenierías, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional, Buenos Aires, Argentina
dc.contributor.institutionDepartament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Barcelona, Spain
dc.contributor.institutionConsejo Nacional de Investigaciones Científicas y Técnicas, Buenos Aires, Argentina
dc.identifier.volume9
kaust.personPazos, Sebastian M.
dc.date.accepted2021-09-07
dc.identifier.eid2-s2.0-85116900571
refterms.dateFOA2021-10-27T13:51:06Z


Files in this item

Thumbnail
Name:
fphy-09-735021.pdf
Size:
5.734Mb
Format:
PDF
Description:
Publisher's version

This item appears in the following Collection(s)

Show simple item record

This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
Except where otherwise noted, this item's license is described as This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.