Using Dipole Interaction to Achieve Nonvolatile Voltage Control of Magnetism in Multiferroic Heterostructures
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Material Science and Engineering Program
Material Science and Engineering
Physical Science and Engineering Division King Abdullah University of Science and Technology Thuwal 23955-6900 Saudi Arabia
KAUST Grant NumberCRF-2019-4081-CRG8
Permanent link to this recordhttp://hdl.handle.net/10754/672968
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AbstractNonvolatile electrical control of magnetism is crucial for developing energy-efficient magnetic memory. Based on strain-mediated magnetoelectric coupling, a multiferroic heterostructure containing an isolated magnet requires nonvolatile strain to achieve this control. However, the magnetization response of an interacting magnet to strain remains elusive. Herein, Co/MgO/CoFeB magnetic tunnel junctions (MTJs) exhibiting dipole interaction on ferroelectric substrates are fabricated. Remarkably, nonvolatile voltage control of the resistance in the MTJs is demonstrated, which originates from the nonvolatile magnetization rotation of an interacting CoFeB magnet driven by volatile voltage-generated strain. Conversely, for an isolated CoFeB magnet, this volatile strain induces volatile control of magnetism. These results reveal that the magnetization response to volatile strain among interacting magnets is different from that among isolated magnets. The findings highlight the role of dipole interaction in multiferroic heterostructures and can stimulate future research on nonvolatile electrical control of magnetism with additional interactions.
CitationChen, A., Piao, H., Ji, M., Fang, B., Wen, Y., Ma, Y., … Zhang, X. (2021). Using Dipole Interaction to Achieve Nonvolatile Voltage Control of Magnetism in Multiferroic Heterostructures. Advanced Materials, 2105902. doi:10.1002/adma.202105902
SponsorsThis work was supported by King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. CRF-2019-4081-CRG8. H.-G.P. was supported by the National Key R&D Program of China (Grant No. 2017YFB0903702). The authors acknowledge the Nanofabrication Core Lab at KAUST for their excellent assistance.
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