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dc.contributor.authorGalceran, Regina
dc.contributor.authorTian, Bo
dc.contributor.authorLi, Junzhu
dc.contributor.authorBonell, Frédéric
dc.contributor.authorJamet, Matthieu
dc.contributor.authorVergnaud, Céline
dc.contributor.authorMarty, Alain
dc.contributor.authorGarcia, Jose H.
dc.contributor.authorSierra, Juan F.
dc.contributor.authorCostache, Marius V.
dc.contributor.authorRoche, Stephan
dc.contributor.authorValenzuela, Sergio O.
dc.contributor.authorManchon, Aurélien
dc.contributor.authorZhang, Xixiang
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2021-10-14T06:30:46Z
dc.date.available2021-10-14T06:30:46Z
dc.date.issued2021-10-01
dc.date.submitted2021-04-22
dc.identifier.citationGalceran, R., Tian, B., Li, J., Bonell, F., Jamet, M., Vergnaud, C., … Schwingenschlögl, U. (2021). Control of spin–charge conversion in van der Waals heterostructures. APL Materials, 9(10), 100901. doi:10.1063/5.0054865
dc.identifier.issn2166-532X
dc.identifier.doi10.1063/5.0054865
dc.identifier.urihttp://hdl.handle.net/10754/672841
dc.description.abstractThe interconversion between spin and charge degrees of freedom offers incredible potential for spintronic devices, opening routes for spin injection, detection, and manipulation alternative to the use of ferromagnets. The understanding and control of such interconversion mechanisms, which rely on spin–orbit coupling, is therefore an exciting prospect. The emergence of van der Waals materials possessing large spin–orbit coupling (such as transition metal dichalcogenides or topological insulators) and/or recently discovered van der Waals layered ferromagnets further extends the possibility of spin-to-charge interconversion to ultrathin spintronic devices. Additionally, they offer abundant room for progress in discovering and analyzing novel spin–charge interconversion phenomena. Modifying the properties of van der Waals materials through proximity effects is an added degree of tunability also under exploration. This Perspective discusses the recent advances toward spin-to-charge interconversion in van der Waals materials. It highlights scientific developments which include techniques for large-scale growth, device physics, and theoretical aspects.
dc.description.sponsorshipThe authors thank H. Okuno for the images in Figs. 2(d)–2(h). All authors acknowledge financial support from the King Abdullah University of Science and Technology under Grant No. ORS-2018-CRG7-3717. The ICN2 authors were also supported by the European Union Horizon 2020 research and innovation program under Grant Agreement Nos. 881603 (Graphene Flagship), 824140 (TOCHA, H2020-FETPROACT-01-2018), and 840588 (GRISOTO, Marie Sklodowska-Curie fellowship). ICN2 is also funded by the CERCA Programme/Generalitat de Catalunya and is supported by the Severo Ochoa program from Spanish MINECO (Grant Nos. SEV2017-0706, PID2019-111773RB-I00/AEI/10.13039/501100011033, and RYC2019-028368-I/AEI/10.13039/501100011033). The CNRSCEA authors acknowledge financial support from the European Union Horizon 2020 research and innovation program under Grant Agreement No. 881603 (Graphene Flagship), the French ANR projects MAGICVALLEY (Grant No. ANR-18-CE24-0007), and ELMAX (Grant No. ANR-20-CE24-0015) and from the UGA IDEXIRS/EVASPIN
dc.publisherAIP Publishing
dc.relation.urlhttps://aip.scitation.org/doi/10.1063/5.0054865
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleControl of spin–charge conversion in van der Waals heterostructures
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAPL Materials
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionCatalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
dc.contributor.institutionUniversity of Grenoble Alpes, CNRS, CEA, Spintec, 38000 Grenoble, France
dc.contributor.institutionICREA–Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain
dc.contributor.institutionAix-Marseille Université, CNRS, CINaM, Marseille, France
dc.identifier.volume9
dc.identifier.issue10
dc.identifier.pages100901
kaust.personTian, Bo
kaust.personLi, Junzhu
kaust.personZhang, Xixiang
kaust.personSchwingenschlögl, Udo
dc.date.accepted2021-07-06
refterms.dateFOA2021-10-14T06:34:08Z


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