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dc.contributor.authorBonell, Frédéric
dc.contributor.authorMarty, Alain
dc.contributor.authorVergnaud, Céline
dc.contributor.authorConsonni, Vincent
dc.contributor.authorOkuno, Hanako
dc.contributor.authorOuerghi, Abdelkarim
dc.contributor.authorBoukari, Hervé
dc.contributor.authorJamet, Matthieu
dc.date.accessioned2021-11-10T08:11:08Z
dc.date.available2021-10-05T11:46:14Z
dc.date.available2021-11-10T08:11:08Z
dc.date.issued2021-09-16
dc.identifier.urihttp://hdl.handle.net/10754/672119
dc.description.abstractPtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and X-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2V 1s-1 at room temperature and up to 447 cm2V-1s-1 at low temperature.
dc.description.sponsorshipThe authors acknowledge financial support from the European Union Horizon 2020 FETOPEN program under project NANOPOLY (Grant Agreement No. 829061), from the French ANR under project ELMAX (Grant No. ANR-20-CE24-0015) and from the King Abdullah University of Science and Technology under Grant No. ORS-2018-CRG7-3717. The authors also acknowledge the LANEF framework (ANR-10-LABX-51-01) for its support with mutualized infrastructure.
dc.publisherarXiv
dc.relation.urlhttps://arxiv.org/pdf/2109.08102.pdf
dc.rightsArchived with thanks to arXiv
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 United States
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/us/
dc.titleHigh carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)
dc.eprint.versionPre-print
dc.identifier.arxivid2109.08102
kaust.grant.numberORS-2018-CRG7-3717
kaust.acknowledged.supportUnitOSR


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