Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration
AuthorsAlmogbel, Abdullah S.
Zollner, Christian J.
Saifaddin, Burhan K.
DenBaars, S. P.
Speck, James S.
Permanent link to this recordhttp://hdl.handle.net/10754/671957
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CitationAlmogbel, A. S., Zollner, C. J., Saifaddin, B. K., Iza, M., Wang, J., Yao, Y., … Speck, J. S. (2021). Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration. AIP Advances, 11(9), 095119. doi:10.1063/5.0066652
SponsorsThis work was funded by the KACST-KAUST-UCSB Technology transfer program and the Solid State Lighting and Energy Electronics Center (SSLEEC) at UC Santa Barbara; a part of this work was carried out in the California NanoSystems Institute at UCSB. The research reported here made use of shared facilities of the UCSB MRSEC (Grant No. NSF DMR 1720256). A portion of this research was conducted in the UCSB nanofabrication facility, NSF NNIN network (Grant No. ECS-0335765). This work was partially funded by the Academy of Finland, Project No. 315082. The authors would like to gratefully thank Dr. Tom Mates for SIMS measurements and Dr. Stacia Keller and Dr. Mohammed Abo Alreesh for their insightful inputs. In addition, the authors would like to thank Dr. Youli Li from MRL and the cleanroom staff at the UCSB nanofabrication facility for the technical support provided.