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dc.contributor.authorKirilenko, Pavel
dc.contributor.authorZhuang, Zhe
dc.contributor.authorIida, Daisuke
dc.contributor.authorVelazquez-Rizo, Martin
dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2021-09-15T10:58:22Z
dc.date.available2021-09-15T10:58:22Z
dc.date.issued2021-09-15
dc.date.submitted2021-08-24
dc.identifier.citationKirilenko, P., Zhuang, Z., Iida, D., Velazquez-Rizo, M., & Ohkawa, K. (2021). Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes. Crystals, 11(9), 1123. doi:10.3390/cryst11091123
dc.identifier.issn2073-4352
dc.identifier.doi10.3390/cryst11091123
dc.identifier.urihttp://hdl.handle.net/10754/671246
dc.description.abstractWe fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated peak in the EL spectrum of the red LEDs at 20 mA was observed at 465 nm. This additional peak also exhibits a blue-shift with increasing currents as does the main emission peak. Using high-resolution microscopy, we observed many point-like emission spots in the EL emission images at the currents below 1 mA. However, these emission spots cannot be identified at currents above 5 mA because the red emission from quantum wells (QWs) is much stronger than that emitted by these spots. Finally, we demonstrate that these emission spots are related to the defects generated in red QWs. The measured In content was lower at the vicinity of the defects, which was regarded as the reason for separated short-wavelength emission in red InGaN LEDs.
dc.description.sponsorshipKing Abdullah University of Science and Technology (BAS/1/1676-01-01).
dc.publisherMDPI AG
dc.relation.urlhttps://www.mdpi.com/2073-4352/11/9/1123
dc.rightsThis article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleInvestigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes
dc.typeArticle
dc.contributor.departmentElectrical and Computer Engineering
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
dc.contributor.departmentElectrical and Computer Engineering Program
dc.identifier.journalCrystals
dc.eprint.versionPublisher's Version/PDF
dc.identifier.volume11
dc.identifier.issue9
dc.identifier.pages1123
kaust.personKirilenko, Pavel
kaust.personZhuang, Zhe
kaust.personIida, Daisuke
kaust.personVelazquez-Rizo, Martin
kaust.personOhkawa, Kazuhiro
kaust.grant.numberBAS/1/1676-01-01
dc.date.accepted2021-09-09
refterms.dateFOA2021-09-15T10:59:22Z


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