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dc.contributor.authorLu, Yongchang
dc.contributor.authorFeng, Xi
dc.contributor.authorWang, Qingwei
dc.contributor.authorZhang, Xueqian
dc.contributor.authorFang, Ming
dc.contributor.authorSha, Wei E.I.
dc.contributor.authorHuang, Zhixiang
dc.contributor.authorXu, Quan
dc.contributor.authorNiu, Li
dc.contributor.authorChen, Xieyu
dc.contributor.authorOuyang, Chunmei
dc.contributor.authorYang, Yuanmu
dc.contributor.authorZhang, Xixiang
dc.contributor.authorPlum, Eric
dc.contributor.authorZhang, Shuang
dc.contributor.authorHan, Jiaguang
dc.contributor.authorZhang, Weili
dc.date.accessioned2021-09-09T05:57:48Z
dc.date.available2021-09-09T05:57:48Z
dc.date.issued2021-09-09
dc.identifier.citationLu, Y., Feng, X., Wang, Q., Zhang, X., Fang, M., Sha, W. E. I., … Zhang, W. (2021). Integrated Terahertz Generator-Manipulators Using Epsilon-near-Zero-Hybrid Nonlinear Metasurfaces. Nano Letters. doi:10.1021/acs.nanolett.1c02372
dc.identifier.doi10.1021/acs.nanolett.1c02372
dc.identifier.urihttp://hdl.handle.net/10754/671133
dc.description.abstractIn terahertz (THz) technologies, generation and manipulation of THz waves are two key processes usually implemented by different device modules. Integrating THz generation and manipulation into a single compact device will advance the applications of THz technologies in various fields. Here, we demonstrate a hybrid nonlinear plasmonic metasurface incorporating an epsilon-near-zero (ENZ) indium tin oxide (ITO) layer, for seamlessly combining efficient generation and manipulation of THz waves across a wide frequency band. The coupling between the plasmonic resonance of the metasurface and the ENZ mode of the ITO thin film enhances the THz conversion efficiency by more than four orders of magnitude. Meanwhile, such a hybrid device is capable of shaping the polarization and wavefront of the emitted THz beam via the engineered nonlinear Pancharatnam-Berry (PB) phases of the plasmonic meta-atoms. The presented hybrid nonlinear metasurface opens a new avenue towards miniaturized integrated THz devices and systems with advanced functionalities.
dc.description.sponsorshipThis work is supported by the National Key Research and Development Program of China (Grant No. 2017YFA0701004); the National Natural Science Foundation of China (Grant Nos. 61735012, 62025504, 62075158, 11974259, 61875150, 61935015, 62005193, 61901001, U20A20164, 61971001, 61975177 and 62135008); the Tianjin Municipal Fund for Distinguished Young Scholars (18JCJQJC45600); the UK's Engineering and Physical Sciences Research Council (Grant Nos. EP/M009122/1 and EP/T02643X/1); H2020 ERC Consolidator Grant (648783). The authors acknowledge the High-performance Computing Platform of Anhui University for providing computing resources.
dc.publisherAmerican Chemical Society (ACS)
dc.rightsArchived with thanks to Nano Letters
dc.titleIntegrated terahertz generator-manipulator using epsilon-near-zero-hybrid nonlinear metasurfaces
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNano Letters
dc.rights.embargodate2022-09-09
dc.eprint.versionPost-print
dc.contributor.institutionCenter for Terahertz waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University and the Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin 300072, China.
dc.contributor.institutionKey Laboratory of Intelligent Computing and Signal Processing, Ministry of Education, Anhui University, Hefei 230039, China
dc.contributor.institutionKey Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China
dc.contributor.institutionState Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
dc.contributor.institutionOptoelectronics Research Centre and Centre for Photonic Metamaterials, University of Southampton, Highfield, Southampton SO17 1BJ, UK
dc.contributor.institutionDepartment of Physics, Faculty of Science, University of Hong Kong, Hong Kong
dc.contributor.institutionSchool of Electrical and Computer Engineering, Oklahoma State University, Stillwater, Oklahoma 74078, USA.
kaust.personLu, Yongchang
kaust.personFeng, Xi
kaust.personWang, Qingwei
kaust.personZhang, Xixiang
dc.date.published-online2021-09-09
dc.date.published-print2021-09-22


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