Applications of Magnetic Transition Metal Dichalcogenide Monolayers to the Field of Spin-orbitronics
Embargo End Date2022-09-05
Permanent link to this recordhttp://hdl.handle.net/10754/670961
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Access RestrictionsAt the time of archiving, the student author of this dissertation opted to temporarily restrict access to it. The full text of this dissertation will become available to the public after the expiration of the embargo on 2022-09-05.
AbstractMagnetic randomaccess memory (MRAM) devices have been widely studied since the 1960s. During this time, the size of spintronic devices has continued to decrease. Conse quently, there is now an urgent need for new lowdimensional magnetic materials to mimic the traditional structures of spintronics at the nanoscale. We also require new effective mechanisms to conduct the main functions of memory devices, which are: reading, writ ing, and storing data. To date, most research efforts have focused on MRAM devices based on magnetic tun nel junction (MTJ), such as a conventional fielddriven MRAM and spintransfer torque (STT)MRAM devices. Consequently, many efforts are currently focusing on new alterna tives using different techniques, such as spinorbit torque (SOT) and magnetic skyrmions (a skyrmion is the smallest potential disruption to a uniform magnet required to obtain more effective memory devices). The most promising memory devices are SOTMRAMs and skyrmionbased memories. This study investigates the magnetic properties of 1Tphase vanadium dichalcogenide (VXY) Janus monolayers, where X, Y= S, Se, or Te (i.e., monolayers that exhibit inversion symme try breaking due to the presence of different chalcogen elements). This study is developed along four directions: (I) the nature of the magnetism and the SOT effect of Janus mono layers; (II) the Dzyaloshinskii Moriya interaction (DMI); (III) investigation of stability en hancement by adopting practical procedures for industry; and (IV) study of the effect of a hexagonal boron nitride (hBN) monolayer as an insulator on the magnetism of the VXY monolayer. This study provides a clear perspective for the next generation of memory de vices, such as SOTMRAMs based on transition metal dichalcogenide monolayers.
CitationSmaili, I. (2021). Applications of Magnetic Transition Metal Dichalcogenide Monolayers to the Field of Spin-orbitronics. KAUST Research Repository. https://doi.org/10.25781/KAUST-I2HM3