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Origin of Competing Blue and Green Emission in InGaN/GaN Quantum-Disks in Nanowires Heterostructure

dc.contributor.authorPrabaswara, Aditya
dc.contributor.authorTien Khee Ng
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorWei, Nini
dc.contributor.authorZhao, Chao
dc.contributor.authorAlbadri, Abdulrahman M.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorEI-Desouki, Munir M.
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2021-08-16T11:51:51Z
dc.date.available2021-08-16T11:51:51Z
dc.date.issued2015
dc.identifier.citationPrabaswara, A., Ng, T. K., Anjum, D., Wei, N., Zhao, C., Albadri, A. M., … Ooi, B. S. (2015). Origin of competing blue and green emission in InGaN/GaN quantum-disks in nanowires heterostructure. 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC). doi:10.1109/nmdc.2015.7439266
dc.identifier.isbn9781467393621
dc.identifier.issn2378-377X
dc.identifier.doi10.1109/nmdc.2015.7439266
dc.identifier.urihttp://hdl.handle.net/10754/670638
dc.description.abstractWe report on the mechanism of emission quenching for InGaN/GaN quantum-disks in nanowires heterostructure grown catalyst-free using plasma-assisted molecular beam epitaxy. Temperature-dependent photoluminescence measurement shows the existence of blue and green emission spectra, with the blue peak quenched at room temperature. Characterization results suggest that the quenching is caused by the presence of stacking faults, strain, and the possibility of point defects in the active region.
dc.publisherIEEE
dc.relation.urlhttp://ieeexplore.ieee.org/document/7439266/
dc.rightsArchived with thanks to IEEE
dc.subjectGaN
dc.subjectInGaN
dc.subjectmolecular beam epitaxy
dc.subjectnanowire
dc.titleOrigin of Competing Blue and Green Emission in InGaN/GaN Quantum-Disks in Nanowires Heterostructure
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
dc.contributor.departmentElectrical and Computer Engineering Program
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Characterization
dc.conference.date2015-09-12 to 2015-09-16
dc.conference.name10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
dc.conference.locationAnchorage, AK, USA
dc.identifier.wosutWOS:000380447300037
dc.eprint.versionPost-print
kaust.personPrabaswara, Aditya
kaust.personTien Khee Ng
kaust.personAnjum, Dalaver H.
kaust.personWei, Nini
kaust.personZhao, Chao
kaust.personAlbadri, Abdulrahman M.
kaust.personAlyamani, Ahmed Y.
kaust.personEI-Desouki, Munir M.
kaust.personOoi, Boon S.
dc.identifier.eid2-s2.0-84968883422


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