Origin of Competing Blue and Green Emission in InGaN/GaN Quantum-Disks in Nanowires Heterostructure
Type
Conference PaperAuthors
Prabaswara, Aditya
Tien Khee Ng
Anjum, Dalaver H.
Wei, Nini
Zhao, Chao

Albadri, Abdulrahman M.
Alyamani, Ahmed Y.
EI-Desouki, Munir M.
Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Science and Engineering (CEMSE) DivisionElectrical and Computer Engineering Program
Electron Microscopy
Photonics Laboratory
Physical Characterization
Date
2015Permanent link to this record
http://hdl.handle.net/10754/670638
Metadata
Show full item recordAbstract
We report on the mechanism of emission quenching for InGaN/GaN quantum-disks in nanowires heterostructure grown catalyst-free using plasma-assisted molecular beam epitaxy. Temperature-dependent photoluminescence measurement shows the existence of blue and green emission spectra, with the blue peak quenched at room temperature. Characterization results suggest that the quenching is caused by the presence of stacking faults, strain, and the possibility of point defects in the active region.Citation
Prabaswara, A., Ng, T. K., Anjum, D., Wei, N., Zhao, C., Albadri, A. M., … Ooi, B. S. (2015). Origin of competing blue and green emission in InGaN/GaN quantum-disks in nanowires heterostructure. 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC). doi:10.1109/nmdc.2015.7439266Publisher
IEEEConference/Event name
10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015ISBN
9781467393621Additional Links
http://ieeexplore.ieee.org/document/7439266/ae974a485f413a2113503eed53cd6c53
10.1109/nmdc.2015.7439266