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dc.contributor.authorLanza, Mario
dc.contributor.authorPalumbo, Felix
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorAguirre, Fernando
dc.contributor.authorBoyeras, Santiago
dc.contributor.authorYuan, Bin
dc.contributor.authorYalon, Eilam
dc.contributor.authorMoreno, Enrique
dc.contributor.authorWu, Tianru
dc.contributor.authorRoldan, Juan B.
dc.date.accessioned2021-08-15T12:27:32Z
dc.date.available2021-08-15T12:27:32Z
dc.date.issued2021-08-12
dc.date.submitted2021-06-15
dc.identifier.citationLanza, M., Palumbo, F., Shi, Y., Aguirre, F., Boyeras, S., Yuan, B., … Roldan, J. B. (2021). Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching. Advanced Electronic Materials, 2100580. doi:10.1002/aelm.202100580
dc.identifier.issn2199-160X
dc.identifier.issn2199-160X
dc.identifier.doi10.1002/aelm.202100580
dc.identifier.urihttp://hdl.handle.net/10754/670610
dc.description.abstractTwo-terminal metal/insulator/metal (MIM) memristors exhibiting threshold resistive switching (RS) can develop advanced key tasks in solid-state nano/micro-electronic circuits, such as selectors and integrate-and-fire electronic neurons. MIM-like memristors using multilayer hexagonal boron nitride (h-BN) as dielectric are especially interesting because they have shown threshold RS with ultra-low energy consumption per state transition down to the zeptojoule regime. However, the factors enabling stable threshold RS at such low operation energies are still not fully understood. Here it is shown that the threshold RS in 150 nm × 150 nm Au/Ag/h-BN/Au memristors is especially stable because the temperature in the h-BN stack during operation (i.e., at low currents ≈1 μA) is very low (i.e., ≈310 K), due to the high in-plane thermal conductivity of h-BN and its low thickness. Only when the device is operated at higher currents (i.e., ≈200 μA) the temperatures at the h-BN increase remarkably (i.e., >500 K), which produce a stable non-volatile conductive nanofilament (CNF). This work can bring new insights to understand the performance of 2D materials based RS devices, and help to develop the integration of 2D materials in high-density nanoelectronics.
dc.description.sponsorshipThis work has been supported by the Baseline funding scheme of the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia, the Ministry of Science and Technology of China (Grant No. 2018YFE0100800), the National Natural Science Foundation of China (Grants No. 11661131002, 61874075), the Ministry of Finance of China (grant no. SX21400213), the 111 Project from the State Administration of Foreign Experts Affairs of China, the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, and the Priority Academic Program Development of Jiangsu Higher Education Institutions, the MINCyT (Contract Nos. PICT2013/1210, PICT2016/0579, and PME2015-0196), CONICET (Project No. PIP-11220130100077CO), and UTN.BA (Project Nos. PID-UTN EIUTIBA4395TC3, CCUTIBA4764TC, MATUNBA4936, CCUTNBA5182, and CCUTNBA0006615). Y.S. acknowledge support from the European Union (Marie Sklodowska-Curie actions, Grant No. 894840).
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/aelm.202100580
dc.rightsArchived with thanks to Advanced Electronic Materials
dc.titleTemperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Electronic Materials
dc.rights.embargodate2022-08-12
dc.eprint.versionPost-print
dc.contributor.institutionUnidad de Investigación y Desarrollo de las Ingenierías-CONICET Facultad Regional, Buenos Aire Universidad Tecnológica Nacional (UIDI-CONICET/FRBA-UTN) Medrano 951 Buenos Aires C1179AAQ Argentina
dc.contributor.institutionIMEC Kapeldreef 75 Leuven 3001 Belgium
dc.contributor.institutionDepartment of Electronic and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona E-08028 Spain
dc.contributor.institutionMaterials Science and Engineering Department Guangdong Technion – Israel Institute of Technology Shantou 515063 China
dc.contributor.institutionAndrew and Erna Viterbi Faculty of Electrical Engineering Technion–Israel Institute of Technology Haifa 32000 Israel
dc.contributor.institutionUJM-Saint-Etienne CNRSInstitute of Optics Graduate School University of LyonLaboratoire Hubert Curien UMR5516 St-Etienne F-42023 France
dc.contributor.institutionSchool of Physical Science and Technology Shanghai Tech University 393 Middle Huaxia Road, Shanghai Pudong 201210 China
dc.contributor.institutionDepartamento de Electrónica y Tecnología de Computadores Facultad de Ciencias Universidad de Granada Avd. Fuentenueva s/n Granada 18071 Spain
dc.identifier.pages2100580
kaust.personLanza, Mario
dc.date.accepted2021-08-12
kaust.acknowledged.supportUnitBaseline funding


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