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dc.contributor.authorTak, Bhera Ram
dc.contributor.authorKumar, Sudheer
dc.contributor.authorKapoor, Ashok Kumar
dc.contributor.authorWang, Danhao
dc.contributor.authorLi, Xiaohang
dc.contributor.authorSun, Haiding
dc.contributor.authorSingh, Rajendra
dc.date.accessioned2021-08-08T12:19:07Z
dc.date.available2021-08-08T12:19:07Z
dc.date.issued2021-08-23
dc.date.submitted2021-03-11
dc.identifier.citationTak, B. R., Kumar, S., Kapoor, A. K., Wang, D., Li, X., Sun, H., & Singh, R. (2021). Recent advances in the growth of gallium oxide thin films employing various growth techniques- A review. Journal of Physics D: Applied Physics. doi:10.1088/1361-6463/ac1af2
dc.identifier.issn0022-3727
dc.identifier.issn1361-6463
dc.identifier.doi10.1088/1361-6463/ac1af2
dc.identifier.urihttp://hdl.handle.net/10754/670473
dc.description.abstractGallium oxide (Ga2O3) is rapidly emerging as a material of choice for the development of solar blind photodetectors and power electronic devices which are particularly suitable in harsh environment applications, owing to its wide bandgap and extremely high Baliga figure of merit (BFOM). The Ga2O3 based devices show robustness against chemical, thermal and radiation environments. Unfortunately, the current Ga2O3 technology is still not mature for commercial usage., Thus, extensive research on the growth of various polymorph of Ga2O3 materials has been carried out. This article aims to provide an overview of the current understanding of epitaxial growth of different phases of Ga2O3 by various growth techniques including pulsed laser deposition (PLD), molecular beam epitaxy (MBE), metal-organic chemical vapour deposition (MOCVD), sputtering, mist chemical vapour deposition (Mist CVD) and atomic layer deposition (ALD).The review also investigates the factors such as the growth temperature, pressure, carrier gas, III/V ratio, substrate as well as doping which would influence the synthesis and the stability of meta stable phases of Ga2O3. In addition, a through discussion of growth window is also provided using phase diagrams for aforementioned epitaxial deposition methods.
dc.description.sponsorshipDr. R. Singh is thankful to DST for partial financial support for this work through the BRICS project. Dr. H. Sun acknowledges the National Science Foundation of China (Grant Nos.51961145110) for partial support to this work. Dr. B.R. Tak is thankful to the Department of Science and Technology (DST) INSPIRE Ph.D. fellowship
dc.publisherIOP Publishing
dc.relation.urlhttps://iopscience.iop.org/article/10.1088/1361-6463/ac1af2
dc.rightsAs the Version of Record of this article is going to be/has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.
dc.rights.urihttps://creativecommons.org/licences/by-nc-nd/3.0
dc.titleRecent advances in the growth of gallium oxide thin films employing various growth techniques- A review
dc.typeArticle
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
dc.contributor.departmentElectrical and Computer Engineering Program
dc.identifier.journalJournal of Physics D: Applied Physics
dc.rights.embargodate2022-08-05
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
dc.contributor.institutionSchool of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
kaust.personLi, Xiaohang
dc.date.accepted2021-08-05
refterms.dateFOA2021-08-08T12:20:18Z
dc.date.published-online2021-08-23
dc.date.published-print2021-11-11


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As the Version of Record of this article is going to be/has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.
Except where otherwise noted, this item's license is described as As the Version of Record of this article is going to be/has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.