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Hassan Albuhairan - Thesis - Final Draft.pdf
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Hassan Albuhairan - Thesis - Final Draft
Type
ThesisAuthors
Albuhairan, Hassan
Advisors
Schwingenschlögl, Udo
Committee members
Laquai, Frédéric
De Wolf, Stefaan

KAUST Department
Physical Science and Engineering (PSE) DivisionDate
2021-06-30Embargo End Date
2022-08-01Permanent link to this record
http://hdl.handle.net/10754/670352
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At the time of archiving, the student author of this thesis opted to temporarily restrict access to it. The full text of this thesis will become available to the public after the expiration of the embargo on 2022-08-01.Abstract
We employ a four-band continuum model to study the transport and confinement in an n-p-n junction in bilayer chiral borophene for both the identical- and oppositechirality configurations. The conditions for transport and confinement are elucidated in terms of the pseudospin. We study the transmission and reflection probabilities, conductances, and bound states. We demonstrate the existence of topological states in a domain wall between domains of opposite-chirality bilayer chiral borophene with reversed layer stacking. We find that changing the interlayer bias modifies the conductance of the identical-chirality configuration but not that of the opposite-chirality configuration, and that it induces a layer localization of the bound and topological states. Our findings suggest paths towards utilization of the layer degree of freedom in bilayer chiral borophene in future electronic devices.Citation
Albuhairan, H. (2021). Transport and Confinement in Bilayer Chiral Borophene. KAUST Research Repository. https://doi.org/10.25781/KAUST-AV809ae974a485f413a2113503eed53cd6c53
10.25781/KAUST-AV809