Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition
Permanent link to this recordhttp://hdl.handle.net/10754/670249
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CitationForonda, H. M., Laurent, M. A., Yonkee, B., Keller, S., DenBaars, S. P., & Speck, J. S. (2016). Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition. Semiconductor Science and Technology, 31(8), 085003. doi:10.1088/0268-1242/31/8/085003
SponsorsThis work was supported by the King Abduallah Center for Science and Technology-King Abdullah University of Science and Technology-University of California, Santa Barbara Solid State Lighting Program (KACST-KAUST-UCSB SSLP). The authors would like to the Materials Research Laboratory (MRL), California Nanosystems Institute (CNSI), and the Nanofabrication facility at UC Santa Barbara for providing access and training to their laboratories.