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dc.contributor.authorGuo, Wei
dc.contributor.authorChen, Li
dc.contributor.authorXu, Houqiang
dc.contributor.authorQian, Yingda
dc.contributor.authorSheikhi, Moheb
dc.contributor.authorHoo, Jason
dc.contributor.authorGu, Shiping
dc.contributor.authorXu, Liang
dc.contributor.authorLiu, Jianzhe
dc.contributor.authorAlQatari, Feras S.
dc.contributor.authorLi, Xiaohang
dc.contributor.authorHe, Kaiyan
dc.contributor.authorFeng, Zhe Chuan
dc.contributor.authorYe, Jichun
dc.date.accessioned2021-07-12T06:54:34Z
dc.date.available2021-07-12T06:54:34Z
dc.date.issued2020-03-20
dc.date.submitted2020-01-10
dc.identifier.citationGuo, W., Chen, L., Xu, H., Qian, Y., Sheikhi, M., Hoo, J., … Ye, J. (2020). Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains. Photonics Research, 8(6), 812. doi:10.1364/prj.387700
dc.identifier.issn2327-9125
dc.identifier.doi10.1364/PRJ.387700
dc.identifier.urihttp://hdl.handle.net/10754/670137
dc.description.abstractWe report on the carrier dynamic and electronic structure investigations on AlGaN-based deep-ultraviolet multiple quantum wells (MQWs) with lateral polarity domains. The localized potential maximum is predicted near the domain boundaries by first-principle calculation, suggesting carrier localization and efficient radiative recombination. More importantly, lateral band diagrams of the MQWs are proposed based on electron affinities and valance band levels calculated from ultraviolet (UV) photoelectron spectroscopy. The proposed lateral band diagram is further demonstrated by surface potential distribution collected by Kelvin probe microscopy and the density-of-state calculation of energy bands. This work illustrates that lateral polarity structures are playing essential roles in the electronic properties of III-nitride photonic devices and may provide novel perspective in the realization of high-efficiency UV emitters.
dc.description.sponsorshipNational Key Research and Development Program of China (2016YFB0400802); National Natural Science Foundation of China (61704176, 61974149); Key Research and Development Program of Zhejiang Province (2019C01080, 2020C01145); Ningbo Innovation 2025 Major Project (2018B10088, 2019B10121).
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?URI=prj-8-6-812
dc.rightsArchived with thanks to PHOTONICS RESEARCH
dc.titleRevealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains
dc.typeArticle
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
dc.contributor.departmentElectrical and Computer Engineering Program
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPHOTONICS RESEARCH
dc.rights.embargodate2022-07-12
dc.identifier.wosutWOS:000537961100008
dc.eprint.versionPost-print
dc.contributor.institutionNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
dc.contributor.institutionUniversity of Chinese Academy of Sciences, Beijing 100049, China
dc.contributor.institutionCollege of Physics Science & Technology, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Guangxi University, Nanning 530004, China
dc.contributor.institutionAdvanced Micro-Fabrication Equipment Inc., Shanghai 201201, China
dc.contributor.institutionZhe Jiang Bright Semiconductor Technology Co., Ltd., Jinhua 321026, China
dc.identifier.volume8
dc.identifier.issue6
dc.identifier.pages812-818
kaust.personAlqatari, Feras
kaust.personLi, Xiaohang
dc.date.accepted2020-03-17
refterms.dateFOA2021-07-12T06:55:36Z


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