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dc.contributor.authorVinodh, Rajangam
dc.contributor.authorBabu, Rajendran Suresh
dc.contributor.authorGopi, Chandu V. V. Muralee
dc.contributor.authorDeviprasath, Chinnadurai
dc.contributor.authorAtchudan, Raji
dc.contributor.authorSamyn, Leandro Marques
dc.contributor.authorFerreira de Barros, Ana Lucia
dc.contributor.authorKim, Hee-Je
dc.contributor.authorYi, Moonsuk
dc.date.accessioned2021-07-12T06:33:20Z
dc.date.available2021-07-12T06:33:20Z
dc.date.issued2020-01-09
dc.date.submitted2019-11-10
dc.identifier.citationVinodh, R., Babu, R. S., Gopi, C. V. V. M., Deviprasath, C., Atchudan, R., Samyn, L. M., … Yi, M. (2020). Influence of annealing temperature in nitrogen doped porous carbon balls derived from hypercross-linked polymer of anthracene for supercapacitor applications. Journal of Energy Storage, 28, 101196. doi:10.1016/j.est.2020.101196
dc.identifier.issn2352-152X
dc.identifier.doi10.1016/j.est.2020.101196
dc.identifier.urihttp://hdl.handle.net/10754/670129
dc.description.abstractNitrogen rich porous carbon balls are derived from hypercross-linked polymers (HCPs) of anthracene and subsequent carbonization with urea. The obtained materials exhibit combination of abundant microporous and minimal mesoporous property with large surface area (623.27 to 928.44 m2 g − 1). The influence of annealing temperature in nitrogen doped porous HCPs was examined the capacitive performance of the prepared electrode materials using electrochemical techniques. A symmetric device was assembled, and it shows a high specific capacitance of 206.4 F g − 1 at 0.2 A g − 1 with excellent rate capability. Also, the material exhibits excellent durability only 3.5% loss was observed after 5000 cycles (capacitance retention of 96.5%). These outcomes justify that nitrogen anchored porous carbon balls are excellent materials for high-performance symmetric supercapacitors.
dc.description.sponsorshipThis research work was financially supported by BK21 PLUS, Creative Human Resource Development Program for IT Convergence, Pusan National University, Busan, South Korea. The authors also appreciate supports from the Brazilian granting agencies such as FAPERJ (E-26/110.087/2014, /213.577/2015 and /216.730/2015), CAPES (BEX 5383/15-3), (PNPD-PhD scholarships) and CNPq. Dr. R. S. Babu would like to acknowledge CAPES for the financial support provided in the form of PNPD Fellowship.
dc.publisherElsevier BV
dc.relation.urlhttps://linkinghub.elsevier.com/retrieve/pii/S2352152X19314975
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in JOURNAL OF ENERGY STORAGE. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in JOURNAL OF ENERGY STORAGE, [28, , (2020-01-09)] DOI: 10.1016/j.est.2020.101196 . © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectNitrogen doping
dc.subjectHypercross-linked polymer
dc.subjectCarbon balls
dc.subjectSupercapacitors
dc.subjectEnergy storage
dc.titleInfluence of annealing temperature in nitrogen doped porous carbon balls derived from hypercross-linked polymer of anthracene for supercapacitor applications
dc.typeArticle
dc.contributor.departmentPhotonics Laboratory, Division of Computer, Electrical, and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal Jeddah 23955-6900, Saudi Arabia
dc.identifier.journalJOURNAL OF ENERGY STORAGE
dc.rights.embargodate2022-01-09
dc.identifier.wosutWOS:000530629300001
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Electrical and Computer Engineering, Pusan National University, Busandaehak-ro 63 beon-gil, Geumjeong-gu, Busan, 46241, South Korea
dc.contributor.institutionLaboratory of Experimental and Applied Physics, Centro Federal de Educação Tecnológica Celso Suckow da Fonseca, Rio de Janeiro 20271-110, Brazil
dc.contributor.institutionSchool of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
dc.identifier.volume28
dc.identifier.pages101196
kaust.personGopi, Chandu V. V. Muralee
dc.date.accepted2020-01-02
dc.identifier.eid2-s2.0-85096902335


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