Inkjet Printed Circuits with 2D Semiconductor Inks for High-Performance Electronics
Kim, Jong M.
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Chemical Science Program
KAUST Solar Center (KSC)
Permanent link to this recordhttp://hdl.handle.net/10754/669508
MetadataShow full item record
AbstractAir-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with 2D materials have the potential to enable the next generation of high performance low-cost printed digital electronics. Here, the authors demonstrate air-stable, low voltage (<5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2), and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating an average switching time of τMoS2 ≈ 4.1 μs for the MoS2 FETs. They achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. They then integrate MoS2 and IDT-BT FETs to realize inkjet-printed complementary logic inverters with a voltage gain |Av| ≈ 4 when in resistive load configuration and |Av| ≈ 1.4 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
CitationCarey, T., Arbab, A., Anzi, L., Bristow, H., Hui, F., Bohm, S., … Torrisi, F. (2021). Inkjet Printed Circuits with 2D Semiconductor Inks for High-Performance Electronics. Advanced Electronic Materials, 2100112. doi:10.1002/aelm.202100112
Sponsors.C., A.A., and L.A. have contributed equally to this work. The authors acknowledge funding from EPSRC grants EP/P02534X/2, EP/R511547/1, EP/T005106/1, Imperial College Collaboration Kick-Starter grant and Trinity College, Cambridge, the EU H2020 Graphene Flagship Core 3 Grant No. 881603, Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200) and the National Natural Science Foundation of China (grants no. 61874075), and a Technion-Guangdong Fellowship.
JournalAdvanced Electronic Materials
Except where otherwise noted, this item's license is described as This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.