Inkjet Printed Circuits with 2D Semiconductor Inks for High-Performance Electronics
Kim, Jong M.
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Chemical Science Program
KAUST Solar Center (KSC)
Online Publication Date2021-05-13
Print Publication Date2021-07
Permanent link to this recordhttp://hdl.handle.net/10754/669508
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AbstractAir-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with 2D materials have the potential to enable the next generation of high performance low-cost printed digital electronics. Here, the authors demonstrate air-stable, low voltage (<5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2), and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating an average switching time of τMoS2 ≈ 4.1 μs for the MoS2 FETs. They achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. They then integrate MoS2 and IDT-BT FETs to realize inkjet-printed complementary logic inverters with a voltage gain |Av| ≈ 4 when in resistive load configuration and |Av| ≈ 1.4 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
CitationCarey, T., Arbab, A., Anzi, L., Bristow, H., Hui, F., Bohm, S., … Torrisi, F. (2021). Inkjet Printed Circuits with 2D Semiconductor Inks for High-Performance Electronics. Advanced Electronic Materials, 2100112. doi:10.1002/aelm.202100112
Sponsors.C., A.A., and L.A. have contributed equally to this work. The authors acknowledge funding from EPSRC grants EP/P02534X/2, EP/R511547/1, EP/T005106/1, Imperial College Collaboration Kick-Starter grant and Trinity College, Cambridge, the EU H2020 Graphene Flagship Core 3 Grant No. 881603, Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200) and the National Natural Science Foundation of China (grants no. 61874075), and a Technion-Guangdong Fellowship.
JournalAdvanced Electronic Materials
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