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dc.contributor.authorZhuang, Zhe
dc.contributor.authorIida, Daisuke
dc.contributor.authorVelazquez-Rizo, Martin
dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2021-06-07T06:11:29Z
dc.date.available2021-06-07T06:11:29Z
dc.date.issued2021-05-17
dc.identifier.citationZhuang, Z., Iida, D., Velazquez-Rizo, M., & Ohkawa, K. (2021). 606-nm InGaN amber micro-light-emitting diodes with an on-wafer external quantum efficiency of 0.56%. IEEE Electron Device Letters, 1–1. doi:10.1109/led.2021.3080985
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.doi10.1109/led.2021.3080985
dc.identifier.urihttp://hdl.handle.net/10754/669411
dc.description.abstractWe demonstrated amber InGaN 47 × 47 μ2 micro-light-emitting diodes (μLEDs) with the peak wavelength of 606 nm and full-width at maximum (FWHM) of 50 nm at 20 A/cm2. The amber μLEDs exhibited a 33-nm blue-shift of the peak wavelength and obtain broader FWHMs to approximately 56 nm at 5 to 100 A/cm2. The peak on-wafer external quantum efficiency was 0.56% at 20 A/cm2. The characteristic temperature was 50.80 K at 20 to 60 A/cm2 but increased to 120.140 K at 80 to 100 A/cm2. The strong increase in the characteristic temperature from 60 to 80 A/cm2 could mainly be attributed to the saturation of the Shockley-Read-Hall non-radiative recombination at high current densities.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/9432854/
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectInGaN
dc.subjectamber micro-light-emitting diode
dc.subjecton-wafer external quantum efficiency
dc.subjectcharacteristic temperature
dc.title606-nm InGaN amber micro-light-emitting diodes with an on-wafer external quantum efficiency of 0.56%
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalIEEE Electron Device Letters
dc.eprint.versionPost-print
dc.identifier.pages1-1
kaust.personZhuang, Zhe
kaust.personIida, Daisuke
kaust.personVelazquez-Rizo, Martin
kaust.personOhkawa, Kazuhiro
refterms.dateFOA2021-06-07T06:12:26Z


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This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/
Except where otherwise noted, this item's license is described as This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/