Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic Application
KAUST DepartmentMMH Laboratory, Department of Electrical and Computer Engineering (ECE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia.
Electrical Engineering Program
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/669357
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AbstractIn this article, the performance of silicon FinFET is compared with carbon nanotube (CNT-FET) and 2-D field-effect transistors (2D-FETs) for the upcoming node CMOS logic application. Based on the experimental results, a 17-stage ring oscillator (RO) circuit is implemented using the compact models to analyze the stage-delay and energy-delay performances. A tightly positioned 20- and 10-nm channel-length-based CNT-FET enhances Ion and also increases the leakage currents significantly. Due to poor electrostatic control and increased gate leakage, the CNT-FET and 2D-FET provide lowered Ion and a limited ac performance. Thus, targeting an off-state current, the FinFET delivers more than three times higher drive current, as well as five times better energy-delay performances in comparison to the CNT-FET and 2D-FET. On the other hand, scaled organic FETs are yet far away to compare with FinFET technology. Hence, the silicon-based (3-D) FETs are leading in all the devices (2-D, 1-D, and 0-D) for scaling next-generation CMOS technology.
CitationDas, U. K., & Hussain, M. M. (2021). Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic Application. IEEE Transactions on Electron Devices, 1–6. doi:10.1109/ted.2021.3081076