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dc.contributor.authorWen, Chao
dc.contributor.authorLi, Xuehua
dc.contributor.authorZanotti, Tommaso
dc.contributor.authorPuglisi, Francesco Maria
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorSaiz, Fernan
dc.contributor.authorAntidormi, Aleandro
dc.contributor.authorRoche, Stephan
dc.contributor.authorZheng, Wenwen
dc.contributor.authorLiang, Xianhu
dc.contributor.authorHu, Jiaxin
dc.contributor.authorDuhm, Steffen
dc.contributor.authorRoldan, Juan B.
dc.contributor.authorWu, Tianru
dc.contributor.authorChen, Victoria
dc.contributor.authorPop, Eric
dc.contributor.authorGarrido, Blas
dc.contributor.authorZhu, Kaichen
dc.contributor.authorHui, Fei
dc.contributor.authorLanza, Mario
dc.date.accessioned2021-05-30T12:35:40Z
dc.date.available2021-05-30T12:35:40Z
dc.date.issued2021-05-27
dc.identifier.citationWen, C., Li, X., Zanotti, T., Puglisi, F. M., Shi, Y., Saiz, F., … Lanza, M. (2021). Advanced Data Encryption ​using 2D Materials. Advanced Materials, 2100185. doi:10.1002/adma.202100185
dc.identifier.issn0935-9648
dc.identifier.issn1521-4095
dc.identifier.pmid34046938
dc.identifier.doi10.1002/adma.202100185
dc.identifier.doi10.1002/adma.202170205
dc.identifier.urihttp://hdl.handle.net/10754/669293
dc.description.abstractAdvanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences of bits. TRNG circuits with high degree of randomness and low power consumption may be fabricated by using the random telegraph noise (RTN) current signals produced by polarized metal/insulator/metal (MIM) devices as entropy source. However, the RTN signals produced by MIM devices made of traditional insulators, i.e., transition metal oxides like HfO<sub>2</sub> and Al<sub>2</sub> O<sub>3</sub> , are not stable enough due to the formation and lateral expansion of defect clusters, resulting in undesired current fluctuations and the disappearance of the RTN effect. Here, the fabrication of highly stable TRNG circuits with low power consumption, high degree of randomness (even for a long string of 2<sup>24</sup>  - 1 bits), and high throughput of 1 Mbit s<sup>-1</sup> by using MIM devices made of multilayer hexagonal boron nitride (h-BN) is shown. Their application is also demonstrated to produce one-time passwords, which is ideal for the internet-of-everything. The superior stability of the h-BN-based TRNG is related to the presence of few-atoms-wide defects embedded within the layered and crystalline structure of the h-BN stack, which produces a confinement effect that avoids their lateral expansion and results in stable operation.
dc.description.sponsorshipM.L. acknowledges generous support from the King Abdullah University of Science and Technology. This work was supported by the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200), the National Natural Science Foundation of China (grants no. 61874075), the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the 111 Project from the State Administration of Foreign Experts Affairs of China. A.A. and S.R. acknowledge the project: ModElling Charge and Heat trANsport in 2D-materIals based Composites—MECHANIC reference number: PCI2018-093120 funded by Ministerio de Ciencia, Innovación y Universidades. ICN2 is funded by the CERCA Programme/Generalitat de Catalunya and is supported by the Severo Ochoa program from Spanish MINECO (Grant No. SEV-2017-0706). Y.S. acknowledges support from the European Union (Marie Sklodowska-Curie actions (grant no. 894840). The authors acknowledge technical advice from H.-S. Philip Wong from Stanford University and Xiaoming Xie from Chinese Academy of Sciences.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/adma.202100185
dc.rightsArchived with thanks to Advanced Materials
dc.titleAdvanced Data Encryption ​using 2D Materials
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Materials
dc.rights.embargodate2022-05-27
dc.eprint.versionPost-print
dc.contributor.institutionInstitute of Functional Nano and Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren Ai Road Suzhou 215123 China
dc.contributor.institutionDipartimento di Ingegneria “Enzo Ferrari” Università di Modena e Reggio Emilia Modena 41125 Italy
dc.contributor.institutionIMEC Kapeldreef 75 Heverlee, Leuven B-3001 Belgium
dc.contributor.institutionCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and BIST Campus UAB, Bellaterra Barcelona E-08193 Spain
dc.contributor.institutionICREA Institucio Catalana de Recerca i Estudis Avançats Barcelona E-08010 Spain
dc.contributor.institutionDepartamento de Electrónica y Tecnología de Computadores Universidad de Granada Facultad de Ciencias Avd. Fuentenueva s/n Granada 18071 Spain
dc.contributor.institutionSchool of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road, Pudong Shanghai 201210 China
dc.contributor.institutionDepartment of Electrical Engineering Stanford University Stanford CA 94305 USA
dc.contributor.institutionDepartment of Electronic and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona E-08028 Spain
dc.contributor.institutionDepartment of Materials Science and Engineering Technion – Israel Institute of Technology Haifa 320003 Israel
dc.identifier.pages2100185
kaust.personSaiz, Fernan
kaust.personLanza, Mario
refterms.dateFOA2021-06-02T05:37:12Z


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