Electron-Selective Lithium Contacts for Crystalline Silicon Solar Cells
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Solar Center (KSC)
KAUST Grant NumberOSR-CRGURF/1/3383
Embargo End Date2022-05-24
Permanent link to this recordhttp://hdl.handle.net/10754/669244
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AbstractSeparating photogenerated charge carriers by carrier-selective heterostructure contacts rather than by doped homojunctions is a promising pathway to approach the theoretical power conversion efficiency (PCE) limit of crystalline silicon (c-Si) solar cells. An electron-selective, hole-blocking lithium contact for c-Si solar cells is presented by simple thermal evaporation of air-stable Li3N powder. It is found that this lithium contact introduces only a minimal Schottky-barrier height for electron transport at its interface with lightly doped n-type c-Si surfaces, resulting in a low contact resistivity of 12.8 mΩ cm2. By implementing a full-area electron-selective lithium contact, an n-type c-Si solar cell with a PCE of 19% is achieved, representing a 4% absolute PCE improvement over reference devices with an aluminum contact. The choices of electron-selective contact materials for photovoltaic devices, using simple, scalable fabrication methods are extended.
CitationKang, J., Yang, X., Liu, W., Liu, J., Xu, H., Allen, T., & De Wolf, S. (2021). Electron-Selective Lithium Contacts for Crystalline Silicon Solar Cells. Advanced Materials Interfaces, 2100015. doi:10.1002/admi.202100015
SponsorsJ.K., X.Y., and W.L. contributed equally to this work. Xinyu Zhang is thanked for Raman spectroscopy characterizations and Mohamed Nejib Hedhili for XPS measurement. This work was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRGURF/1/3383.
JournalAdvanced Materials Interfaces