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dc.contributor.authorLi, Junzhu
dc.contributor.authorChen, Mingguang
dc.contributor.authorSamad, Abdus
dc.contributor.authorDong, Haocong
dc.contributor.authorRay, Avijeet
dc.contributor.authorZhang, Junwei
dc.contributor.authorJiang, Xiaochuan
dc.contributor.authorSchwingenschlögl, Udo
dc.contributor.authorTian, Bo
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2021-05-24T07:51:48Z
dc.date.available2021-05-24T07:51:48Z
dc.date.issued2021-05-17
dc.identifier.citationLi, J., Chen, M., Samad, A., Dong, H., Ray, A., Zhang, J., … Zhang, X. (2021). Wafer-Scale Single-Crystal Monolayer Graphene Grown Directly on Insulating Substrates. doi:10.21203/rs.3.rs-95262/v1
dc.identifier.doi10.21203/rs.3.rs-95262/v1
dc.identifier.urihttp://hdl.handle.net/10754/669226
dc.description.abstractCurrently, the direct synthesis of inch-scale single-crystal graphene on insulating substrates is limited by the lack of metal catalysis, suitable crystallization conditions, and self-limiting growth mechanisms. In this study, we investigated a direct growth of adlayer-free ultra-flat wafer-scale single-crystal monolayer graphene on insulating substrates by the multi-loop plasma-etching-assisted chemical vapor deposition (MPE-CVD) method. Firstly, an atomic-thick growth nanochamber was created by fabricating single-crystal Cu(111) foils on Al2O3(0001) substrates, in which graphene was directly synthesized by MPE-CVD. After growth, the Cu(111) foil was detached using a liquid-nitrogen-assisted separation method, and the ultra-high-quality single-crystal graphene film was experimentally achieved on Al2O3(0001). The field-effect transistors fabricated on the directly grown graphene exhibited excellent electronic transport properties with high carrier mobilities. This work breaks the bottleneck in the direct synthesis of single-crystal graphene on insulating substrates and paves the way for next-generation carbon-based atomic electronics and semiconductor nanodevices.
dc.description.sponsorshipWe thank R. S. Ruoff for comments on manuscript preparation. We thank Y. Gao and F. Laquai for help with UV–Vis spectrum measurement, and N. Wehbe for help with D-SIMS measurement. This work was supported by King Abdullah University of Science and Technology (KAUST), under award numbers: OSR-2018-CRG7-3717 and OSR-2016-CRG5-2996.
dc.publisherResearch Square Platform LLC
dc.relation.urlhttps://www.researchsquare.com/article/rs-95262/v1
dc.relation.urlhttps://www.researchsquare.com/article/rs-95262/v1.pdf
dc.rightsArchived with thanks to Research Square Platform LLC
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectsingle-crystal graphene
dc.subjectMPE-CVD
dc.subjectmetal catalysis
dc.titleWafer-Scale Single-Crystal Monolayer Graphene Grown Directly on Insulating Substrates
dc.typePreprint
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.eprint.versionPre-print
dc.contributor.institutionEleven-dimensional Nanomaterial Research Institute
dc.contributor.institutionKey Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China
dc.contributor.institutionXiamen University
kaust.personLi, Junzhu
kaust.personChen, Mingguang
kaust.personSamad, Abdus
kaust.personRay, Avijeet
kaust.personSchwingenschlögl, Udo
kaust.personTian, Bo
kaust.personZhang, Xixiang
kaust.grant.numberOSR-2016-CRG5-2996
kaust.grant.numberOSR-2018-CRG7-3717
refterms.dateFOA2021-05-24T07:52:40Z
kaust.acknowledged.supportUnitCRG
kaust.acknowledged.supportUnitOSR


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