Wafer-Scale Single-Crystal Monolayer Graphene Grown Directly on Insulating Substrates
KAUST DepartmentComputational Physics and Materials Science (CPMS)
Material Science and Engineering
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/669226
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AbstractCurrently, the direct synthesis of inch-scale single-crystal graphene on insulating substrates is limited by the lack of metal catalysis, suitable crystallization conditions, and self-limiting growth mechanisms. In this study, we investigated a direct growth of adlayer-free ultra-flat wafer-scale single-crystal monolayer graphene on insulating substrates by the multi-loop plasma-etching-assisted chemical vapor deposition (MPE-CVD) method. Firstly, an atomic-thick growth nanochamber was created by fabricating single-crystal Cu(111) foils on Al2O3(0001) substrates, in which graphene was directly synthesized by MPE-CVD. After growth, the Cu(111) foil was detached using a liquid-nitrogen-assisted separation method, and the ultra-high-quality single-crystal graphene film was experimentally achieved on Al2O3(0001). The field-effect transistors fabricated on the directly grown graphene exhibited excellent electronic transport properties with high carrier mobilities. This work breaks the bottleneck in the direct synthesis of single-crystal graphene on insulating substrates and paves the way for next-generation carbon-based atomic electronics and semiconductor nanodevices.
CitationLi, J., Chen, M., Samad, A., Dong, H., Ray, A., Zhang, J., … Zhang, X. (2021). Wafer-Scale Single-Crystal Monolayer Graphene Grown Directly on Insulating Substrates. doi:10.21203/rs.3.rs-95262/v1
SponsorsWe thank R. S. Ruoff for comments on manuscript preparation. We thank Y. Gao and F. Laquai for help with UV–Vis spectrum measurement, and N. Wehbe for help with D-SIMS measurement. This work was supported by King Abdullah University of Science and Technology (KAUST), under award numbers: OSR-2018-CRG7-3717 and OSR-2016-CRG5-2996.
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