Wafer-Scale Single-Crystal Monolayer Graphene Grown Directly on Insulating Substrates
KAUST DepartmentMaterial Science and Engineering
Physical Science and Engineering (PSE) Division
Material Science and Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/669226
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AbstractCurrently, the direct synthesis of inch-scale single-crystal graphene on insulating substrates is limited by the lack of metal catalysis, suitable crystallization conditions, and self-limiting growth mechanisms. In this study, we investigated a direct growth of adlayer-free ultra-flat wafer-scale single-crystal monolayer graphene on insulating substrates by the multi-loop plasma-etching-assisted chemical vapor deposition (MPE-CVD) method. Firstly, an atomic-thick growth nanochamber was created by fabricating single-crystal Cu(111) foils on Al2O3(0001) substrates, in which graphene was directly synthesized by MPE-CVD. After growth, the Cu(111) foil was detached using a liquid-nitrogen-assisted separation method, and the ultra-high-quality single-crystal graphene film was experimentally achieved on Al2O3(0001). The field-effect transistors fabricated on the directly grown graphene exhibited excellent electronic transport properties with high carrier mobilities. This work breaks the bottleneck in the direct synthesis of single-crystal graphene on insulating substrates and paves the way for next-generation carbon-based atomic electronics and semiconductor nanodevices.
CitationLi, J., Chen, M., Samad, A., Dong, H., Ray, A., Zhang, J., … Zhang, X. (2021). Wafer-Scale Single-Crystal Monolayer Graphene Grown Directly on Insulating Substrates. doi:10.21203/rs.3.rs-95262/v1
SponsorsWe thank R. S. Ruoff for comments on manuscript preparation. We thank Y. Gao and F. Laquai for help with UV–Vis spectrum measurement, and N. Wehbe for help with D-SIMS measurement. This work was supported by King Abdullah University of Science and Technology (KAUST), under award numbers: OSR-2018-CRG7-3717 and OSR-2016-CRG5-2996.
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