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dc.contributor.authorLi, Xuehua
dc.contributor.authorZanotti, Tommaso
dc.contributor.authorWang, Tao
dc.contributor.authorZhu, Kaichen
dc.contributor.authorPuglisi, Francesco Maria
dc.contributor.authorLanza, Mario
dc.date.accessioned2021-05-03T07:18:18Z
dc.date.available2021-05-03T07:18:18Z
dc.date.issued2021-04-23
dc.date.submitted2021-03-03
dc.identifier.citationLi, X., Zanotti, T., Wang, T., Zhu, K., Puglisi, F. M., & Lanza, M. (2021). Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study. Advanced Functional Materials, 2102172. doi:10.1002/adfm.202102172
dc.identifier.issn1616-301X
dc.identifier.issn1616-3028
dc.identifier.doi10.1002/adfm.202102172
dc.identifier.urihttp://hdl.handle.net/10754/669053
dc.description.abstractSome memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true random number generators (TRNG) for advanced data encryption. However, there is still no clear guide on how essential manufacturing parameters like materials selection, thicknesses, deposition methods, and device lateral size can influence the quality of the RTN signal. In this paper, an exhaustive statistical analysis on the quality of the RTN signals produced by different MIM-like memristors is reported, and straightforward guidelines for the fabrication of memristors with enhanced RTN performance are presented, which are: i) Ni and Ti electrodes show better RTN than Au electrodes, ii) the 50 μm × 50 μm devices show better RTN than the 5 μm × 5 μm ones, iii) TiO2 shows better RTN than HfO2 and Al2O3, iv) sputtered-oxides show better RTN than ALD-oxides, and v) 10 nm thick oxides show better RTN than 5 nm thick oxides. The RTN signals recorded have been used as entropy sources in high-throughput TRNG circuits, which have passed the randomness tests of the National Institute of Standards and Technology. The work can serve as a useful guide for materials scientists and electronic engineers when fabricating MIM-like memristors for RTN applications.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/adfm.202102172
dc.rightsArchived with thanks to Advanced Functional Materials
dc.subjectcharge trapping/detraping
dc.subjectmemristors
dc.subjectrandom telegraph noise
dc.subjecttransition metal oxides
dc.subjecttrue random number generators
dc.titleRandom Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Functional Materials
dc.rights.embargodate2022-04-23
dc.eprint.versionPost-print
dc.contributor.institutionInstitute of Functional Nano and Soft Materials Collaborative Innovation Center of Suzhou Nanoscience & Technology Soochow University 199 Ren-Ai Road Suzhou 215123 China
dc.contributor.institutionDipartimento di Ingegneria “Enzo Ferrari” Università di Modena e Reggio Emilia Modena 41125 Italy
dc.contributor.institutionDepartment of Electronic and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona E-08028 Spain
dc.identifier.pages2102172
kaust.personLanza, Mario


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