Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study
Type
ArticleKAUST Department
Physical Science and Engineering (PSE) DivisionDate
2021-04-23Online Publication Date
2021-04-23Print Publication Date
2021-07Embargo End Date
2022-04-23Submitted Date
2021-03-03Permanent link to this record
http://hdl.handle.net/10754/669053
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Show full item recordAbstract
Some memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true random number generators (TRNG) for advanced data encryption. However, there is still no clear guide on how essential manufacturing parameters like materials selection, thicknesses, deposition methods, and device lateral size can influence the quality of the RTN signal. In this paper, an exhaustive statistical analysis on the quality of the RTN signals produced by different MIM-like memristors is reported, and straightforward guidelines for the fabrication of memristors with enhanced RTN performance are presented, which are: i) Ni and Ti electrodes show better RTN than Au electrodes, ii) the 50 μm × 50 μm devices show better RTN than the 5 μm × 5 μm ones, iii) TiO2 shows better RTN than HfO2 and Al2O3, iv) sputtered-oxides show better RTN than ALD-oxides, and v) 10 nm thick oxides show better RTN than 5 nm thick oxides. The RTN signals recorded have been used as entropy sources in high-throughput TRNG circuits, which have passed the randomness tests of the National Institute of Standards and Technology. The work can serve as a useful guide for materials scientists and electronic engineers when fabricating MIM-like memristors for RTN applications.Citation
Li, X., Zanotti, T., Wang, T., Zhu, K., Puglisi, F. M., & Lanza, M. (2021). Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study. Advanced Functional Materials, 2102172. doi:10.1002/adfm.202102172Publisher
WileyJournal
Advanced Functional MaterialsAdditional Links
https://onlinelibrary.wiley.com/doi/10.1002/adfm.202102172ae974a485f413a2113503eed53cd6c53
10.1002/adfm.202102172