Show simple item record

dc.contributor.authorIqbal, Hamna F.
dc.contributor.authorAi, Qianxiang
dc.contributor.authorThorley, Karl J.
dc.contributor.authorChen, Hu
dc.contributor.authorMcCulloch, Iain
dc.contributor.authorRisko, Chad
dc.contributor.authorAnthony, John E.
dc.contributor.authorJurchescu, Oana D.
dc.date.accessioned2021-04-26T09:45:58Z
dc.date.available2021-04-26T09:45:58Z
dc.date.issued2021-04-21
dc.date.submitted2020-10-12
dc.identifier.citationIqbal, H. F., Ai, Q., Thorley, K. J., Chen, H., McCulloch, I., Risko, C., … Jurchescu, O. D. (2021). Suppressing bias stress degradation in high performance solution processed organic transistors operating in air. Nature Communications, 12(1). doi:10.1038/s41467-021-22683-2
dc.identifier.issn2041-1723
dc.identifier.pmid33883553
dc.identifier.doi10.1038/s41467-021-22683-2
dc.identifier.urihttp://hdl.handle.net/10754/668958
dc.description.abstractAbstractSolution processed organic field effect transistors can become ubiquitous in flexible optoelectronics. While progress in material and device design has been astonishing, low environmental and operational stabilities remain longstanding problems obstructing their immediate deployment in real world applications. Here, we introduce a strategy to identify the most probable and severe degradation pathways in organic transistors and then implement a method to eliminate the main sources of instabilities. Real time monitoring of the energetic distribution and transformation of electronic trap states during device operation, in conjunction with simulations, revealed the nature of traps responsible for performance degradation. With this information, we designed the most efficient encapsulation strategy for each device type, which resulted in fabrication of high performance, environmentally and operationally stable small molecule and polymeric transistors with consistent mobility and unparalleled threshold voltage shifts as low as 0.1 V under the application of high bias stress in air.
dc.description.sponsorshipThe work at Wake Forest University was supported by the National Science Foundation through Grant No. DMR-1627925, while the work at the University of Kentucky was supported through Grant No. DMR-1627428. Computing resources on the Lipscomb High Performance Computing Cluster were provided by the University of Kentucky Information Technology Department and the Center for Computational Sciences (CCS). I.M. acknowledges funding from KAUST Office of Sponsored Research (OSR) under awards no. OSR-2018-CARF/CCF-3079, no. OSR-2015-CRG4-2572 and OSR-4106 CPF2019, as well as EC FP7 Project SC2 (610115), EC H2020 (643791), and EPSRC EP/M005143/1.
dc.publisherSpringer Science and Business Media LLC
dc.relation.urlhttp://www.nature.com/articles/s41467-021-22683-2
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.titleSuppressing bias stress degradation in high performance solution processed organic transistors operating in air
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentChemical Science Program
dc.identifier.journalNature Communications
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics and Center for Functional Materials, Wake Forest University, Winston Salem, NC, USA.
dc.contributor.institutionDepartment of Chemistry and Center for Applied Energy Research (CAER), University of Kentucky, Lexington, KY, USA.
dc.contributor.institutionDepartment of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, UK.
dc.identifier.volume12
dc.identifier.issue1
kaust.personChen, Hu
kaust.personMcCulloch, Iain
kaust.grant.numberOSR-2015-CRG4-2572
kaust.grant.numberOSR-2018-CARF/CCF-3079
kaust.grant.numberOSR-4106 CPF2019
dc.date.accepted2021-03-23
refterms.dateFOA2021-04-26T09:47:22Z
kaust.acknowledged.supportUnitCARF
kaust.acknowledged.supportUnitCCF
kaust.acknowledged.supportUnitCRG
kaust.acknowledged.supportUnitInformation Technology
kaust.acknowledged.supportUnitKAUST Office of Sponsored Research (OSR)
dc.date.published-online2021-04-21
dc.date.published-print2021-12


Files in this item

Thumbnail
Name:
s41467-021-22683-2.pdf
Size:
2.572Mb
Format:
PDF
Description:
Publisher's version

This item appears in the following Collection(s)

Show simple item record

This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
Except where otherwise noted, this item's license is described as This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.