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dc.contributor.authorTian, Xuezeng
dc.contributor.authorYan, Xingxu
dc.contributor.authorVarnavides, Georgios
dc.contributor.authorYuan, Yakun
dc.contributor.authorKim, Dennis S.
dc.contributor.authorCiccarino, Christopher J.
dc.contributor.authorAnikeeva, Polina
dc.contributor.authorLi, Ming-yang
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorNarang, Prineha
dc.contributor.authorPan, Xiaoqing
dc.contributor.authorMiao, Jianwei
dc.date.accessioned2021-09-16T08:01:35Z
dc.date.available2021-04-26T07:10:27Z
dc.date.available2021-09-16T08:01:35Z
dc.date.issued2021-09-15
dc.date.submitted2021-03-23
dc.identifier.citationTian, X., Yan, X., Varnavides, G., Yuan, Y., Kim, D. S., Ciccarino, C. J., … Miao, J. (2021). Capturing 3D atomic defects and phonon localization at the 2D heterostructure interface. Science Advances, 7(38). doi:10.1126/sciadv.abi6699
dc.identifier.issn2375-2548
dc.identifier.doi10.1126/sciadv.abi6699
dc.identifier.urihttp://hdl.handle.net/10754/668928
dc.description.abstractThe three-dimensional (3D) local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic, and topological quantum properties but have thus far eluded any direct experimental determination. Here, we use atomic electron tomography to determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with localized vibrational properties at the epitaxial interface. We observe point defects, bond distortion, and atomic-scale ripples and measure the full 3D strain tensor at the heterointerface. By using the experimental 3D atomic coordinates as direct input to first-principles calculations, we reveal new phonon modes localized at the interface, which are corroborated by spatially resolved electron energy-loss spectroscopy. We expect that this work will pave the way for correlating structure-property relationships of a wide range of heterostructure interfaces at the single-atom level.
dc.description.sponsorshipThis work was primarily supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Division of Materials Sciences and Engineering under award DE-SC0010378 and DE-SC0014430. We also acknowledge support by the Army Research Office MURI program under grant no. W911NF-18-1-0431, STROBE: a NSF Science and Technology Center under award DMR1548924, and the NSF DMREF program under award DMR-1437263. The work at UC Irvine is partially supported by the NSF through the University of California-Irvine Materials Research Science and Engineering Center under award DMR-2011967. TEM experiments were conducted using the facilities in the Irvine Materials Research Institute (IMRI) at the University of California, Irvine
dc.publisherAmerican Association for the Advancement of Science (AAAS)
dc.relation.urlhttps://www.science.org/doi/10.1126/sciadv.abi6699
dc.rightsThis is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
dc.rights.urihttps://creativecommons.org/licenses/by-nc/4.0/
dc.titleCapturing 3D atomic defects and phonon localization at the 2D heterostructure interface
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalScience Advances
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA.
dc.contributor.institutionBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
dc.contributor.institutionDepartment of Materials Science and Engineering, University of California, Irvine, Irvine, CA 92697, USA.
dc.contributor.institutionIrvine Materials Research Institute, University of California, Irvine, Irvine, CA 92697, USA.
dc.contributor.institutionHarvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.
dc.contributor.institutionDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
dc.contributor.institutionResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
dc.contributor.institutionDepartment of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA.
dc.contributor.institutionDepartment of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong.
dc.contributor.institutionDepartment of Physics and Astronomy, University of California, Irvine, Irvine, CA 92697, USA.
dc.identifier.volume7
dc.identifier.issue38
dc.identifier.arxivid2104.08978
kaust.personLi, Ming-yang
dc.date.accepted2021-07-22
refterms.dateFOA2021-04-26T07:11:32Z


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This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
Except where otherwise noted, this item's license is described as This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
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