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dc.contributor.authorShan, Maocheng
dc.contributor.authorZhang, Yi
dc.contributor.authorTian, Ming
dc.contributor.authorLin, Rongyu
dc.contributor.authorJiang, Jie’an
dc.contributor.authorZheng, Zhihua
dc.contributor.authorZhao, Yongming
dc.contributor.authorLu, Yi
dc.contributor.authorFeng, Zhechuan
dc.contributor.authorGuo, Wei
dc.contributor.authorDai, Jiangnan
dc.contributor.authorChen, Changqing
dc.contributor.authorWu, Feng
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2021-04-20T06:58:25Z
dc.date.available2021-04-20T06:58:25Z
dc.date.issued2021-04-16
dc.date.submitted2021-01-17
dc.identifier.citationShan, M., Zhang, Y., Tian, M., Lin, R., Jiang, J., Zheng, Z., … Li, X. (2021). Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization. ACS Photonics. doi:10.1021/acsphotonics.1c00090
dc.identifier.issn2330-4022
dc.identifier.issn2330-4022
dc.identifier.doi10.1021/acsphotonics.1c00090
dc.identifier.urihttp://hdl.handle.net/10754/668860
dc.description.abstractWe have demonstrated a record short wavelength lasing at 244.63 nm with TE dominant polarization from GaN quantum wells (QWs) at room temperature (RT). The optical threshold of 310 kW/cm2 is comparable to state-of-the-art AlGaN QW lasers at similar wavelengths. The sample was grown on the AlN/sapphire template pesudomorphically. X-ray diffraction (XRD) shows unambiguous higher-order satellite peaks indicating a sharp interface amid the active region. The excitonic localization was revealed and studied by the photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy at temperatures ranging from 15 K to RT. At 15 K, the multiple-component PL decay curves with the decay time varying from 62.6 to 2.77 ns at different energies confirmed the localized excitons. The peak energy of the temperature-dependent PL spectra exhibited the “S-shape” behavior; and the weak exciton localization with a small localization energy of 14.3 meV was observed. Therefore, even in the low temperature region, the escape possibility of excitons increased as the temperature rose. As a result, the fwhm of the emission spectra changed significantly when the temperature was below 150 K. Above 150 K, the PL decay shape changed from the two-component exponential decay to the single exponential decay, indicating complete delocalization of excitons. The work demonstrates the weak localization and thus smooth interface in the GaN/AlN active region, which are desirable for DUV lasers operating at RT.
dc.description.sponsorshipThis work is supported by the National Key Research and Development Program of China (Grant No.2016YFB0400901), the Center of Micro-Fabrication and Characterization (CMFC) of WNLO, Chinese Academy of Sciences (Grant No. IIMDKFJJ-17-09), the National Natural Science Foundation of China (Grant Nos. 61704062, 61774065, and 61704176), the China Postdoctoral Science Foundation (Grant No. 2016M602287), and the Director Fund of WNLO. The KAUST authors appreciate the support of KAUST Baseline BAS/1/1664-01-01, GCC Research Council REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsphotonics.1c00090
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsphotonics.1c00090.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleTransverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization
dc.typeArticle
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955, Saudi Arabia
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalACS Photonics
dc.rights.embargodate2022-04-16
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China
dc.contributor.institutionCollege of Physics Science and Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi University, Nanning 530004, China
dc.contributor.institutionNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201 Zhejiang China
kaust.personShan, Maocheng
kaust.personLin, Rongyu
kaust.personLu, Yi
kaust.personLi, Xiaohang
kaust.grant.numberBAS/1/1664-01-01
kaust.grant.numberREP/1/3189-01-01
kaust.grant.numberURF/1/3437-01-01
kaust.grant.numberURF/1/3771-01-01
dc.date.accepted2021-04-16
refterms.dateFOA2021-04-20T07:01:13Z
kaust.acknowledged.supportUnitBAS
kaust.acknowledged.supportUnitCompetitive Research Grants
dc.date.published-online2021-04-16
dc.date.published-print2021-05-19


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This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsphotonics.1c00090.
Except where otherwise noted, this item's license is described as This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsphotonics.1c00090.