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dc.contributor.authorLin, Yen Hung
dc.contributor.authorZhao, Kui
dc.contributor.authorLi, Ruipeng
dc.contributor.authorAmassian, Aram
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2021-04-19T07:25:29Z
dc.date.available2021-04-19T07:25:29Z
dc.date.issued2015-01-01
dc.identifier.isbn9781510845503
dc.identifier.issn1883-2490
dc.identifier.urihttp://hdl.handle.net/10754/668830
dc.description.abstractWe report on metal oxide superiattice systems grown from solution and their use in high electron mobility transistors. On the basis of temperature-dependent electron transport measurements and carrier distribution evaluation, we argue that the enhanced performance arises from the presence of 2-dimensional electron gas-like systems formed at the oxide-oxide heterointerfaces.
dc.publisherInternational Display Workshopsidw@idw.ne.jp
dc.rightsArchived with thanks to International Display Workshopsidw@idw.ne.jp
dc.titleExploring low-dimensional charge transport phenomena in solution-processed metal oxide superlattice transistors
dc.typeConference Paper
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.conference.date2015-12-09 to 2015-12-11
dc.conference.name22nd International Display Workshops, IDW 2015
dc.conference.locationOtsu, JPN
dc.eprint.versionPost-print
dc.contributor.institutionBlackett Laboratory, Department of Physics, Imperial College London, London, United Kingdom
dc.contributor.institutionCornell High Energy Synchrotron Source, Wilson Laboratory, Cornell University, Ithaca, NY, United States
dc.identifier.volume1
dc.identifier.pages301-304
kaust.personZhao, Kui
kaust.personAmassian, Aram
dc.identifier.eid2-s2.0-85056389738


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