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dc.contributor.authorPaterson, Alexandra F.
dc.contributor.authorLi, Ruipeng
dc.contributor.authorMarkina, Anastasia
dc.contributor.authorTsetseris, Leonidas
dc.contributor.authorMacphee, Sky
dc.contributor.authorFaber, Hendrik
dc.contributor.authorEmwas, Abdul-Hamid M.
dc.contributor.authorPanidi, Julianna
dc.contributor.authorBristow, Helen
dc.contributor.authorWadsworth, Andrew
dc.contributor.authorBaran, Derya
dc.contributor.authorAndrienko, Denis
dc.contributor.authorHeeney, Martin
dc.contributor.authorMcCulloch, Iain
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2021-04-19T07:13:07Z
dc.date.available2021-04-19T07:13:07Z
dc.date.issued2021
dc.date.submitted2020-12-14
dc.identifier.citationPaterson, A. F., Li, R., Markina, A., Tsetseris, L., MacPhee, S., Faber, H., … Anthopoulos, T. D. (2021). N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR. Journal of Materials Chemistry C, 9(13), 4486–4495. doi:10.1039/d0tc05861k
dc.identifier.issn2050-7526
dc.identifier.issn2050-7534
dc.identifier.doi10.1039/d0tc05861k
dc.identifier.urihttp://hdl.handle.net/10754/668825
dc.description.abstractMolecular doping has been shown to improve the performance of various organic (opto)electronic devices. When compared to p-doped systems, research into n-doped organic small-molecules is relatively limited, primarily due to the lack of suitable dopants and the often encountered unfavourable microstructural effects. These factors have prevented the use of n-doping in a wider range of existing materials, such as non-fullerene acceptors (NFAs), that have already shown great promise for a range of (opto)electronic applications. Here, we show that several different molecular n-dopants, namely [1,2-b:2′,1′-d]benzo[i][2.5]benzodiazocine potassium triflate adduct (DMBI-BDZC), tetra-n-butylammonium fluoride (TBAF) and 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), can be used to n-dope the molecular semiconductor O-IDTBR, a promising NFA, and increase the electron field-effect mobility to >1 cm2 V-1 s-1. By combining complementary experimental techniques with computer simulations of doping and charge carrier dynamics, we show that improved charge transport arises from synergistic effects of n-type doping and morphological changes. Specifically, a new, previously unreported dopant-induced packing orientation results in one of the highest electron mobility values reported to-date for an NFA molecule. Overall, this work highlights the importance of dopant-semiconductor interactions and their impact on morphology, showing that dopant-induced molecular packing motifs may be generic and a key element of the charge transport enhancement observed in doped organics.
dc.description.sponsorshipThe authors acknowledge the King Abdullah University of Science and Technology (KAUST) for financial support. LT acknowledges the use of the GRNET HPC facility ARIS under project STEM-2. This research used CMS beamline of the National Synchrotron Light Source II, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE-SC0012704. DA received funding from the BMBF grants InterPhase and MESOMERIE (FKZ 13N13661, FKZ 13N13656) and the European Union Horizon 2020 research and innovation program ‘‘Widening materials models’’ under Grant Agreement No. 646259 (MOSTOPHOS). D. A. also acknowledges KAUST for hosting his sabbatical. A. M. acknowledges postdoctoral support of the Alexander von Humboldt Foundation.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://xlink.rsc.org/?DOI=D0TC05861K
dc.rightsThis article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/
dc.titleN-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentKing Abdullah University of Science and Technology, KAUST Solar Centre Thuwal 23955-6900
dc.contributor.departmentNMR
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentChemical Science Program
dc.identifier.journalJournal of Materials Chemistry C
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Chemical and Materials Engineering, and Centre for Applied Energy Research, University of Kentucky Lexington Kentucky 40506
dc.contributor.institutionNational Synchrotron Light Source II (NSLS II), Brookhaven National Lab Upton New York
dc.contributor.institutionMax Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany
dc.contributor.institutionDepartment of Physics, National Technical University of Athens Athens GR-15780 Greece
dc.contributor.institutionDepartment of Chemistry and Centre for Plastic Electronics, Imperial College London South Kensington London SW7 2AZ UK
dc.contributor.institutionDepartment of Chemistry, Chemistry Research Laboratory, University of Oxford Oxford OX1 3TA UK
dc.identifier.volume9
dc.identifier.issue13
dc.identifier.pages4486-4495
kaust.personPaterson, Alexandra
kaust.personMacphee, Sky
kaust.personFaber, Hendrik
kaust.personEmwas, Abdul-Hamid M.
kaust.personBaran, Derya
kaust.personMcCulloch, Iain
kaust.personAnthopoulos, Thomas D.
dc.date.accepted2021-03-10
dc.identifier.eid2-s2.0-85103857242
refterms.dateFOA2021-04-19T07:14:29Z


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